IRF2804S-7PPBF Allicdata Electronics
Allicdata Part #:

IRF2804S-7PPBF-ND

Manufacturer Part#:

IRF2804S-7PPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 160A D2PAK-7
More Detail: N-Channel 40V 160A (Tc) 330W (Tc) Surface Mount D2...
DataSheet: IRF2804S-7PPBF datasheetIRF2804S-7PPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package: D2PAK (7-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 330W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IRF2804S-7PPBF Application Field and Working Principle

The IRF2804S-7PPBF is a high power, low-voltage, fast-switching, logic level, N-channel MOSFET designed primarily for DC-DC-converter and automotive applications. This MOSFET is housed in a compact PowerPAK® SO-8 package, allowing for a deep-body drain design and superior thermal performance. Its low gate threshold voltage enables faster turn-on times and higher efficiency, allowing it to easily handle pulse frequencies up to 30kHz. Additionally, its low power dissipation enables higher efficiency and lower power dissipation.

Applications

  • DC-DC Converter
  • Automotive Electronics
  • AC-DC Converter
  • Power Management
  • Power Supply Control

Working Principle

The IRF2804S-7PPBF employs a MOSFET design that enables efficient operation at low voltages, due to its low drain-source resistance. This MOSFET is ideal for use in power management applications, since it can be driven directly from the controller output. Additionally, its high power handling capabilities and fast switching speeds make it ideal for use in high frequency applications. This MOSFET also features a built-in protection circuit that acts as a fail-safe in the event of a fault.

The IRF2804S-7PPBF works by using an insulated gate structure to control the flow of electrical current through the device. This MOSFET is designed to operate in an ON state, when a voltage is applied to its gate. When this voltage is removed, the device returns to its OFF state. This device uses its insulated gate structure to enable efficient operation at lower voltages, since less charge is needed to activate the gate.

The IRF2804S-7PPBF also features a built-in protection circuit which acts as a fail-safe in the event of a fault. This protection circuit automatically shuts off the device when it detects a fault such as overvoltage, overtemperature, or overcurrent. This ensures that the MOSFET is not damaged in the event of a fault.

Conclusion

The IRF2804S-7PPBF is a high power, low-voltage, fast-switching, logic level, N-channel MOSFET designed primarily for DC-DC-converter and automotive applications. Its efficient operation at low voltages and fast switching speeds make it ideal for use in high-frequency applications. Additionally, its low power dissipation and built-in protection circuit makes it a safe and reliable device for use in power management applications.

The specific data is subject to PDF, and the above content is for reference

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