IRF2907ZS-7PPBF Allicdata Electronics
Allicdata Part #:

IRF2907ZS-7PPBF-ND

Manufacturer Part#:

IRF2907ZS-7PPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 160A D2PAK7
More Detail: N-Channel 75V 160A (Tc) 300W (Tc) Surface Mount D2...
DataSheet: IRF2907ZS-7PPBF datasheetIRF2907ZS-7PPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package: D2PAK (7-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7580pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF2907ZS-7PPBF transistors are used in a range of different applications thanks to their unique properties. This single enhancement type MOSFET is specifically designed to make switching systems easier to build and use. It is highly efficient and cost effective, while providing superior performance. In this article, we’ll look at the application field and working principle of the IRF2907ZS-7PPBF transistor.

The IRF2907ZS-7PPBF transistor was designed to operate under high temperature conditions. It has a drain to source breakdown voltage of 30V and an on state drain current of 95A. This makes it ideal for power switching applications, as it can handle a large amount of power without any issues. The transistor also has a fast switching speed, so it can respond quickly to changing electrical signals. Additionally, it has a low on-resistance, so it doesn’t produce a lot of heat when operating. This helps to increase its overall efficiency.

In terms of its application field, the IRF2907ZS-7PPBF transistor is mainly used in automotive, industrial, and consumer applications. It can be used for controlling motors, switching power supplies, and other equipment that require high efficiency and fast switching speeds. Additionally, it can be used for pulse-width modulation, motor speed control, and inverter control. It is also suitable for applications like power factor correction, power supply sequencing and frequency control.

The working principle of the IRF2907ZS-7PPBF transistor is based on its Enhancement-mode MOSFET design. In this type of transistor, a voltage is applied to the gate terminal to open a conducting channel between the source and drain terminals. When the voltage is increased, the current flowing through this channel will also increase, allowing for faster switching speeds. Additionally, the low on-resistance of the transistor ensures that it operates efficiently and with minimal losses.

Overall, the IRF2907ZS-7PPBF transistor is a high-performance transistor that can be used in a variety of applications. It has a low on-resistance and fast switching speeds, making it ideal for switching power supplies, motor control, and other applications. Additionally, its ability to operate in high temperature conditions, makes it suitable for automotive, industrial, and consumer applications. This makes it an excellent choice for engineers looking for an efficient and cost effective solution.

The specific data is subject to PDF, and the above content is for reference

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