IRF2805STRRPBF Allicdata Electronics
Allicdata Part #:

IRF2805STRRPBF-ND

Manufacturer Part#:

IRF2805STRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 135A D2PAK
More Detail: N-Channel 55V 135A (Tc) 200W (Tc) Surface Mount D2...
DataSheet: IRF2805STRRPBF datasheetIRF2805STRRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 104A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF2805STRRPBF is a power MOSFET in a single, monolithic package. It is a special type of transistor, a type of field effect transistor (FET) which uses electrical current to control a voltage, compared to a normal transistor which uses a voltage to control a current. For this reason, power MOSFETs are often regarded as being more reliable and efficient than other types of transistors. Furthermore, their design is typically simpler and requires fewer parts, making them ideal for space-critical applications.

The IRF2805STRRPBF power MOSFET is particularly suited to applications that require high switching performance, low capacitance, and excellent thermal stability. Thanks to its extremely high performance characteristics and design, this device is often used as an electronic switch in power management, motor control, and industrial automation. Its flexibility also makes it suitable for power applications that require a variable resistance such as voltage regulation or switching supplies.

The working principle of IRF2805STRRPBF lies in its design, which includes two distinct fields. One of these fields is the drain region, where an electric field concentrated around the drain-body junction collides with the electric field concentrated around the source-body junction. When an external voltage is applied, the electric field at the drain forces the electrons to travel more quickly, increasing the speed of current. On the other hand, the electric field at the source delays the travel of electrons, decreasing the current speed.

The other field is the gate region. By applying an additional voltage across the gate, an additional electric field is created, which forces the electrons in the drain region to travel even more quickly, thus allowing the current to flow even faster. Additionally, the gate voltage can be increased to effectively shut off the current from the drain, making it an ideal switch for power applications.

In summary, IRF2805STRRPBF is a high-performance power MOSFET that can be used in a variety of applications. Its unique design combines two distinct fields, making it an effective, efficient, and reliable switch for a variety of power management and industrial automation applications. Furthermore, its flexibility makes it an attractive choice for those seeking to optimize performance in demanding, space-critical applications.

The specific data is subject to PDF, and the above content is for reference

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