Allicdata Part #: | IRF3704ZSTRRPBF-ND |
Manufacturer Part#: |
IRF3704ZSTRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 67A D2PAK |
More Detail: | N-Channel 20V 67A (Tc) 57W (Tc) Surface Mount D2PA... |
DataSheet: | IRF3704ZSTRRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 57W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1220pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 7.9 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 67A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF3704ZSTRRPBF is a single, logics level N-channel, enhanced MOSFET (e-MOSFET). It features a maximum drain-source voltage of 30V, ease of use and amplified performance. These features make it an ideal component for use in power management, interface and load switching in industrial, medical, and telecommunications applications.
Application Field
The high input impedance, low gate charge and low drain-source on-resistance characteristic of IRF3704ZSTRRPBF makes it suitable for use in applications such as:
- Power management for portable, low voltage applications
- Power supply and converter circuit design
- Power efficiency optimization
- Portable charger solution design
- Air conditioning and lighting control
- Variable speed motor control
Working Principle
IRF3704ZSTRRPBF works based on the MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) principle. It involves the application of voltage to the gate terminal to control the amount of current flowing between source and drain. When voltage is applied to the gate, electrons move through the oxide layer into a thin conducting channel which forms between source and drain, effectively switching the device on or off.
The e-MOSFET also features a high input impedance which provides greater control and stability over the drain-source current. This improved control helps to regulate the amount of current flowing through the channel, enabling it to remain consistent during operation. It also helps to reduce power consumption and extend the overall life of the device.
In addition, IRF3704ZSTRRPBF has a robust design which offers excellent protection against short-circuit, reverse-bias and ESD threats. This makes it reliable and safe for use in harsh conditions, enabling efficient power management in industrial and medical applications.
Overall, IRF3704ZSTRRPBF provides enhanced performance and improved power efficiency for a wide range of applications. With its robust design and low gate charge, it is the ideal choice for power management, interface and load switching in industrial, medical, and telecommunications applications.
The specific data is subject to PDF, and the above content is for reference
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