IRF3711ZCSTRL

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The IRF3711ZCSTRL is a high-end type doping-profiled metal oxide semiconductor field-effect transistor (FD-MOSFET) produced by International Rectifier Corporation. It is a single-ended drain- topology power device with a drain current capacity (Ids) of 60A and peak drain current (Idm) of 200A. This device is suitable for a variety of power driven applications including general-purpose switching, motor control, and voltage regulation.

The FD-MOSFET is a three-terminal device that consists of source, gate and drain. When the gate voltage (Vgs) is increased, the source-drain current starts to flow. The controlled current is then transferred from the drain to the source through the drain-source channel. FD-MOSFETs are capable of delivering high current density and switching speed.

The IRF3711ZCSTRL is a field-effect transistor that is composed of a single P-channel MOSFET. Its threshold (Vth) is -4V typically, its maximum volts drain-source is 60V, and its maximum volts gate-source is ±20V. This device is able to operate at a temperature range of -55°C to 150°C, and its uniqueness lies in its high total gate charge (Qg) of 91nC and drain-source on resistance (Rds) of 25mOhm at 10V. Furthermore, its drain-source on resistance is quite consistent with temperature.

The IRF3711ZCSTRL FD-MOSFET is typically used in low-voltage applications including mobile devices and notebooks, digital displays, and telecommunications equipment. This device is especially suitable for DC-DC converters, powered driver circuits, rectifier circuits, switch-mode power supplies and power systems that require a low on-resistance and high current carrying capacity.

The working principle of the IRF3711ZCSTRL FD-MOSFET is based on the concept of controlling the flow of current through a channel using an electric field. This electric field is generated by a voltage applied to the gate terminal. When the gate voltage is positive relative to the source, positive charge carriers are drawn away from the source and become trapped in the body of the device. This creates a depletion region in the channel, which increases the resistance and decreases the current flow.

When the gate voltage is negative, the number of trapped negative charges decreases, which reduces the resistance in the channel and increases the current flow. This process can be repeated quickly, allowing the FD-MOSFET to control the flow of current at high speeds. The gate-source voltage must be maintained within the device\'s threshold to keep the device operating accurately.

The IRF3711ZCSTRL FD-MOSFET provides a very high level of current density and switching speed. Its structure allows it to operate in higher temperature ranges without compromising performance. This makes it ideal for use in a variety of power driven applications. It also offers low on-resistance and high current carrying capacity, making it ideal for applications that require a high level of power efficiency.

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