Allicdata Part #: | IRF3711ZCSTRR-ND |
Manufacturer Part#: |
IRF3711ZCSTRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 92A D2PAK |
More Detail: | N-Channel 20V 92A (Tc) 79W (Tc) Surface Mount D2PA... |
DataSheet: | IRF3711ZCSTRR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 92A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF3711ZCSTRR transistor is a single enhancement-mode device that belongs to the class of Field Effect Transistors (FETs). It is a small, low-power N-type FET used in projects such as audio amplifiers, switching supplies, and RF circuits. It has a maximum drain current of 10A and a breakdown voltage of 150V.
When used as a switching device, the IRF3711ZCSTRR transistor has three distinct regions of operation which are classically referred to as “Saturation,” “Cutoff,” and “Linear.” When the gate-to-source voltage (VGS) is below a certain value, the transistor is said to be in “Cutoff.” This means that no current flows between the drain and source and the transistor effectively acts as an open switch. To begin a current flow between the drain and source, the voltage at the gate must be increased beyond the “Cutoff” voltage. This is known as the “Gate Threshold Voltage” and has a typical value of 4V. As the gate voltage is increased, the drain current will also continue to increase until it reaches a maximum value known as the “Drain Saturation Current.”
Once the transistor has been switched “ON” by applying an appropriate gate voltage, it will begin to act as a variable resistor. The resistance of the channel, which is effectively in series with the source, will decrease as the drain voltage (VDS) is increased. This behavior is referred to as “Linear” operation and occurs only when the drain voltage remains below the threshold value of 10V. Once the drain voltage exceeds this value, the transistor enters the “Saturation” region and continues to remain “ON” even though the gate voltage may be reduced. To turn the transistor “OFF” again, the drain voltage must be reduced to a value below 10V.
In practical applications, the IRF3711ZCSTRR transistor is used to control a larger current load. It can be used as a switch to turn on or off a device such as a motor or LED. It can be used as an amplifier to increase the gain of a signal. It can also be used as a voltage regulator, to reduce the voltage of a power supply. In addition, the device can be used for RF applications such as amplifying radio signals. With its low power consumption, low cost, and versatility, the IRF3711ZCSTRR transistor is a valuable device that has a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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