Allicdata Part #: | IRF3711ZS-ND |
Manufacturer Part#: |
IRF3711ZS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 92A D2PAK |
More Detail: | N-Channel 20V 92A (Tc) 79W (Tc) Surface Mount D2PA... |
DataSheet: | IRF3711ZS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 92A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Transistors - FETs, MOSFETs - Single
IRF3711ZS is a power MOSFET N-channel enhancement mode MOSFET which belongs to the single FETs and MOSFETs family. It features integrated maximum rated drain-source current of the package up to 110A and optimized gate charge which is increased by a higher threshold voltage. The MOSFET is fabricated with supported VDMOS (vertical Double Diffused Metal-Oxide-Semiconductor Technology), which is suitable for high voltage power switching in off-line and DC-DC converter circuits. IRF3711ZS support drain-source voltage up to 550V, drain current up to 110A and pinch-off voltage up to 5.00V(max).
Applications
IRF3711ZS finds application in DC-DC, Home appliances, Lighting controls, Motor controls, Switch mode and lighting control SMPS.
Working Principle
Power MOSFETS IRF3711ZS operates in enhancement mode and its operation depends on the gate voltage. When the gate voltage is below the given threshold voltage, the channel is not created between the source and drain and drain current is zero, even if there is a supply voltage between the source and drain. When the gate voltage is more than its threshold voltage, a channel is created between source and drain and the drain current will increase with the gate voltage.
The channel length between is source and drain increases when the source to gate voltage increases. As we increase the gate voltage, a channel is created between source and drain, which helps in draining out the existing charges that creates a depletion region called “dead zone”. This depletion region inhibits current flow between source and drain. So, to make the MOSFET perform its operation, the gate voltage must be provided to overcome the threshold voltage.
Advantages of IRF3711ZS
- It offers low On-state resistance(RDS)0 at 4.5 mOhms.
- It has a very low gate drive requirement with the gate charge up to 4.5 nC.
- The package size is small and very effective for thermal dissipation.
- It offers lower power loss as compared to the other transistors.
- It offers fast switching time as compared to the other transistors.
Disadvantages of IRF3711ZS
- Higher gate drive voltage.
- High gate charge.
- It cannot be used in any circuit with high frequency.
In conclusion, IRF3711ZS can be used for power switching in off-line and DC-DC converter circuits. It offers low resistance, fast switching times and very low gate drive requirements but on the other hand it has higher gate drive voltage and gate charge. Thus, IRF3711ZS provides an effective solution for power switching in applications where the features of reduced gate drive power and performance are required.
The specific data is subject to PDF, and the above content is for reference
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