IRF3808PBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	330W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5310pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	220nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	7 mOhm @ 82A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	140A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IRF3808PBF Application Field and Working Principle

The IRF3808PBF is a silicon N-Channel Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is designed specifically to introduce the attractive features and benefits of a MOSFET into general purpose amplifier and switching applications. This particular model is the IRF3808PBF, which is capable of switch fast, low on-state resistance and minimum drive. It is therefore ideal for use in a variety of applications, such as power amplifiers, voltage conversion, motor control, and digital circuits.

How does it work?

The working principle of a MOSFET is to switch electric current between two different points, using an external voltage. This is done by using a conductive channel, which is surrounded by a semi-permeable barrier. When a voltage is applied to the gate, electrons can flow through the channel, creating a conducting current from source to drain. The size of this current is then determined by the resistance between the source and drain, the frequency of the signal, and the voltage applied to the gate.

Advantages of the IRF3808PBF

The IRF3808PBF has a number of advantages over other types of semiconductors. Firstly, it is capable of switching high currents at low voltages, making it ideal for applications such as switching heavy loads. Additionally, it has excellent heat dissipation, which is particularly useful in power applications, as it prevents damage caused by heat generated by the flow of current. It also has low gate capacitance, meaning that it can switch quickly and accurately, while still remaining power efficient. The IRF3808PBF is also highly reliable and robust, providing long-term performance even under adverse conditions. It has a maximum operating temperature of 150 degrees Celsius and can withstand voltage surges of up to 600 volts DC for ten seconds without damage.

Applications

The IRF3808PBF is commonly used in a variety of applications. It is particularly popular in power supplies and voltage conversion, with its ability to handle high currents and maintain a low on-state resistance. It is also often used as a switch in digital circuits, where its low gate capacitance and high speed switching makes it an ideal choice. Additionally, it is used in motor control, owing to its robust construction, power efficiency, and reliable performance.

Conclusion

The IRF3808PBF is a versatile device with many advantages and suitable for a variety of applications. With its low on-state resistance, excellent heat dissipation, and fast switching speed, it is particularly useful for handling power and voltage conversion, as well as digital and motor control circuits. It is also highly reliable and robust, with a maximum operating temperature of 150 degrees Celsius and voltage surge protection of up to 600 volts DC.

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