IRF6623TR1

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IRF6623TR1 is a high current enhancement mode field-effect transistor (FET). It is designed for use in power management applications and is an ideal choice for DC-DC converters and battery chargers.

IRF6623TR1 has a Drain-Source Voltage of 100 V, a Maximum Drain Current of 6 A, a maximum Power Dissipation of 16 W at Tc = 25°C and comes in a TO-252-2L package. The FET has a Gate-Source Voltage of (Vgs) -25 V, a Gate-Drain Voltage of (Vdg) -25 V and a Gate Current of (Ig) 100 uA. The FET has an operating temperature range of -55°C to 175°C.

Application Field

IRF6623TR1 is used in many applications including: DC-DC converters, switching regulators, motor control, display backlighting, and load switches. It is also used in current sensing, logic level translation and static relays.

Working Principle

The working principle of IRF6623TR1 is simple. The FET acts as a switch to set up a current path between the drain and source terminals under the control of the gate terminal. When a control voltage is applied to the gate terminal, the FET allows current to flow between the drain and source terminals. The flow of current can be controlled by changing the voltage applied to the gate terminal.

IRF6623TR1 has a low on-state resistance (RDS(ON)) of 2-6 mΩ, which means that it can handle high current loads with minimum power loss. Additionally, its low input capacitance makes it suitable for high frequency switching applications.

IRF6623TR1 is a versatile FET that can be used in a wide range of applications. It has a wide operating temperature range and is able to handle high currents with low power loss. It is widely used in DC-DC converters, switched regulators, motor control, display backlighting, load switches, current sensing, logic level translation, and static relays.

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