| Allicdata Part #: | IRF644SPBF-ND |
| Manufacturer Part#: |
IRF644SPBF |
| Price: | $ 2.37 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 250V 14A D2PAK |
| More Detail: | N-Channel 250V 14A (Tc) 3.1W (Ta), 125W (Tc) Surfa... |
| DataSheet: | IRF644SPBF Datasheet/PDF |
| Quantity: | 1265 |
| 1 +: | $ 2.15460 |
| 10 +: | $ 1.92591 |
| 100 +: | $ 1.57922 |
| 500 +: | $ 1.27880 |
| 1000 +: | $ 1.07850 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 125W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 280 mOhm @ 8.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IRF644SPBF is an enhancement-type metal-oxide semiconductor field-effect transistor (MOSFET) manufactured by International Rectifier Corporation. The device is a single-pole, single-throw device that is suitable for the switching of high-power devices in applications such as motor control, motor level control, audio amplifiers, industrial control and power conversion. As the device is a high power MOSFET, it is capable of high voltage, high current and low on-resistance switching with low gate source capacitance and low gate charge.
The IRF644SPBF can be used in a variety of applications. It has a rating of 50V, 4A and a maximum power dissipation of 100W, making it an ideal choice for high current, low voltage switching applications. The low on-resistance of the IRF644SPBF reduces the power required to switch the device, saving energy and heat. The low capacitance and low gate charge of the device make it suitable for high-frequency switching and applications involving high transients.
The IRF644SPBF has an integral source pin, enabling it to be operated in either the linear or saturation modes, depending on the needs of the application. The device has an efficient linear output characteristic which makes it ideal for motor speed control and motor drive applications. The device is also suitable for audio and video amplifiers, and is ideal for use in power conversion applications and power supply systems.
The working principle of the IRF644SPBF is based on the fact that the gate control voltage modulates the drain current, due to the varying resistance of the channel between the source and drain. When a voltage is applied to the gate of the device, the resistance of the channel is decreased, allowing for a higher drain current and a lower voltage drop between the source and the drain. Conversely, when the gate voltage is reduced, the resistance of the channel increases, resulting in a lower drain current and a higher voltage drop between the source and the drain.
The IRF644SPBF is a robust and reliable device, offering high-power performance in a wide range of applications. Its high current and low on-resistance make it suitable for motor control, motor level control, audio amplifier and power conversion applications. Its integral source pin allows for its operation in either linear or saturation modes and its low gate source capacitance and low gate charge make it suitable for high-frequency switching.
The specific data is subject to PDF, and the above content is for reference
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IRF644SPBF Datasheet/PDF