IRF6665TRPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRF6665TRPBFTR-ND |
Manufacturer Part#: |
IRF6665TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 4.2A DIRECTFET |
More Detail: | N-Channel 100V 4.2A (Ta), 19A (Tc) 2.2W (Ta), 42W ... |
DataSheet: | IRF6665TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | DirectFET™ Isometric SH |
Supplier Device Package: | DIRECTFET™ SH |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.2W (Ta), 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 530pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 62 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta), 19A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF6665TRPBF Application Field and Working Principle
The IRF6665TRPBF is a type of Field Effect Transistor (FET). It is a single dielectric gate MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This kind of FET has a unique structure that allows it to offer superior performance in various application fields. In this article, we are going to discuss the IRF6665TRPBF application field and working principle.
The IRF6665TRPBF is mainly used in switch mode power supplies, power converters, inverters, DC-DC converters, motor drives, high-frequency switching, lighting control and telecommunications. The IRF6665TRPBF is designed to switch high-power circuits and can effectively handle high current and voltage levels. It offers excellent switching performance with low ON-state resistance and low gate charge. Furthermore, it has a low thermal impedance and can easily operate under extreme conditions. The IRF6665TRPBF is also characterized by its low on-state voltage, good circuit protection and its ability to withstand high voltage transients.
The working principle of the IRF6665TRPBF can be described as follows. When a positive voltage is applied to the source terminal, a positive charge is induced in the drain terminal. This positive charge induces the electrons from the substrate to the drain terminal, creating a conducting channel of electrons between the source and the drain. This charge is what needs to be maintained to keep the circuit closed and allow for current to pass through. The gate terminal is used to control the conductivity of the channel. When the voltage at the gate terminal is increased, it attracts more electrons from the drain terminal to the source terminal and the channel becomes narrower, resulting in decreased electrical current.
When the voltage at the gate terminal is decreased, fewer electrons are attracted from the drain terminal to the source terminal, and the channel is widened, resulting in increased electrical current. When the voltage at the gate terminal is neutralized, the flow of electrical current returns to what it was originally and the circuit is open. The IRF6665TRPBF is designed to switch high-power circuits and can be used to control current in AC circuits.
In conclusion, the IRF6665TRPBF is an excellent choice in many different applications. It offers superior performance with low ON-state resistance and low gate charge. Its unique structure allows it to handle high current and voltage levels, making it well-suited for use in power supplies, power converters and inverters. Its working principle is based on positively charging the source terminal, inducing a current between the source and the drain. The gate terminal is used to control the conductivity of the channel and to switch the current.
The specific data is subject to PDF, and the above content is for reference
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