| Allicdata Part #: | IRF6710S2TR1PBFTR-ND |
| Manufacturer Part#: |
IRF6710S2TR1PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 25V 12A DIRECTFET |
| More Detail: | N-Channel 25V 12A (Ta), 37A (Tc) 1.8W (Ta), 15W (T... |
| DataSheet: |  IRF6710S2TR1PBF Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Power Dissipation (Max): | 1.8W (Ta), 15W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | DIRECTFET S1 |
| Package / Case: | DirectFET™ Isometric S1 |
| Series: | HEXFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 25V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Ta), 37A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 5.9 mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id: | 2.4V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1190pF @ 13V |
| FET Feature: | -- |
Description
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The IRF6710S2TR1PBF is a transistor used in power switching applications, specifically a single-n-channel MOSFET. It is designed for low-cost, low saturation voltage and low operating temperature, making it ideal for applications that require low-side or high-side power switches such as DC/DC converters, solar panels, and others. This device has an on-state drain-source voltage (VDS) of 60V and a drain-source on-state resistance (RDS) of 72mΩ at 9A, 10V. The gate-source voltage (VGS) can range from -20V to 15V, giving it an operational flexibility.The IRF6710S2TR1PBF is a field-effect transistor (FET), specifically an insulated-gate FET (IGFET), which is a type of power electronics. The working principle of this device is based on the electrostatic field-effect that is created when a voltage is applied between the gate and the source, which modifies the conductivity and resistance of the channel between the source and the drain. This effect is used to modulate and control the flow of electric current through the channel between the source and the drain. The device can be used to either turn on electrical current or to turn it off, depending on the voltage applied on the gate.The typical applications for the IRF6710S2TR1PBF include DC/DC converters, solar panel controllers, motor drivers and controllers, power management ICs, analog ICs, motor and other power electronic circuits, and electro-mechanical interface devices. Its low saturation voltage and low operating temperature make it a great fit for DC-DC converters, solar panels, and other low-side or high-side switching applications. It is also suitable for analog signal switching applications due to its low on-state resistance and compatibility with TTL and CMOS levels.The IRF6710S2TR1PBF is constructed of N-Channel MOSFETs, which have the advantage of a low on-state forward voltage drop, allowing for efficient peak switching speeds for up to 25A at a lower switching frequency. This device is designed for ease of use, as it has a high gate-oxide breakdown voltage of 20V, and its package can also be configured as a dual-in-line (DIL) for parallel connection.In conclusion, the IRF6710S2TR1PBF is a single-n-channel MOSFET transistor designed for power switching applications. Its low saturation voltage and low operating temperature make it ideal for applications that require low-side or high-side power switches such as DC/DC converters and solar panels. The device has a high gate-oxide breakdown voltage of 20V, and its package can also be configured as a DIL for parallel connection. Its typical applications include DC/DC converters, solar panel controllers, motor drivers and controllers, power management ICs, and more.The specific data is subject to PDF, and the above content is for reference
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