IRF630NSTRRPBF Allicdata Electronics
Allicdata Part #:

IRF630NSTRRPBF-ND

Manufacturer Part#:

IRF630NSTRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 200V 9.3A D2PAK
More Detail: N-Channel 200V 9.3A (Tc) 82W (Tc) Surface Mount D2...
DataSheet: IRF630NSTRRPBF datasheetIRF630NSTRRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 82W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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IRF630NSTRRPBF is an N-channel MOSFET (metal-oxide-semiconductor field-effect-transistor). It is commonly used in various applications in both industrial and consumer electronics, such as motor and power control, audio amplifiers and power conversion.

The IRF630NSTRRPBF is a three-terminal device with a high current rating and a low input capacitance. It is available in a surface-mount TO-263 package, making it suitable for use in small form factor applications. It features an N-channel enhancement type MOSFET with an integral Schottky diode, and is designed for use in applications that require large current-handling capability and minimal power loss.

The application field of the IRF630NSTRRPBF is wide. It can be used in a broad range of applications such as: AC/DC power supplies, DC-DC converters, power amplifiers, voltage switching and current control, audio amplifiers, automotive systems, and many other applications where high current capabilities and low on-resistance are needed.

The working principle of the IRF630NSTRRPBF is fairly simple. The device consists of a source, gate and drain which are the three terminals. The source is the connection to the negative side of the voltage supply, the gate is the input, and the drain is the output. When the gate is driven with an appropriate voltage, it allows charge carriers to flow from the source to the drain, forming an N-channel which is the conducting region between the source and the drain.

The IRF630NSTRRPBF is capable of carrying large currents and is designed to minimize the input capacitance and maximize the power handling capabilities of the device. This makes it ideal for applications in which high operating currents are required. It also has excellent thermal characteristics which allow it to operate in high temperatures and dissipate heat efficiently.

In summary, the IRF630NSTRRPBF is an ideal choice for many applications that require large current-handling capability and low input capacitance. It is a three-terminal device with a high current rating and low input capacitance and can be used in a wide range of applications including AC/DC power supplies, motor control, audio amplifiers, and DC-DC converters. Its simple working principle and excellent thermal characteristics make it a perfect choice for today’s challenging applications.

The specific data is subject to PDF, and the above content is for reference

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