IRF6613TR1PBF

Vgs(th) (Max) @ Id:	2.25V @ 250µA
Package / Case:	DirectFET™ Isometric MT
Supplier Device Package:	DIRECTFET™ MT
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.8W (Ta), 89W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5950pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	63nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	3.4 mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	23A (Ta), 150A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRF6613TR1PBF Application Field and Working Principle

IRF6613TR1PBF is a type of transistor classified under FETs, MOSFETs, and Single. It is a relatively powerful transistor in the standard size of industry, with a narrow Vds drain voltage and a wide Id current. The IRF6613TR1PBF is used in many power management applications, such as switch mode power supplies, motor control, and various input and output applications.A FETs, MOSFETs and Single is a type of transistor that falls between an MOSFET and a JFET. It has a three terminal structure; a gate, a drain and a source. The terminals are connected between two electrodes and the output of a device is switched by a voltage applied to the gate. The device works by shutting off transmission of electrons between the source and the drain when the gate has a negative voltage applied.The IRF6613TR1PBF has a low gate resistance of 0.150 Ohm and a low threshold voltage of 0.65 V. It has a maximum drain source voltage (Vds) of 40 V, a maximum drain current (Id) of 25 A, and a maximum power dissipation (Pd) rating of 80 W. It is available in package types of TO-220AB and TO-263AB.When applying the transistors, there are several important considerations that must be noted. One of the most important is the “on-state resistance”, which is the resistance of the transistor when it is “on”. The lower the on-state resistance, the higher the efficiency of the device. Other aspects that must be considered are the package, the temperature operating range, the maximum voltage, power and current ratings, and the current leakage.The IRF6613TR1PBF also has an intrinsic “flyback” protection feature. This means that when the drain voltage goes below 10V, the transistor will shut off, protecting it from overcurrent. This feature can be used in applications such as motor control, where an overcurrent condition could cause serious damage to the motor.The IRF6613TR1PBF is primarily used in applications that require efficient power management and protection. It is most commonly used in switch mode power supplies and motor control. Its low on-state resistance and high current rating make it suitable for many different types of input and output applications. Its flyback protection feature makes it well suited for motor control applications.In conclusion, the IRF6613TR1PBF is a powerful type of FETs, MOSFETs and Single. Its low on-state resistance, high current rating and flyback protection feature make it well suited for many power management applications. The device is available in TO-220AB and TO-263AB packages and has a maximum drain voltage of 40V, a maximum drain current of 25A, and power dissipation rating of 80W.

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