IRF6150 Allicdata Electronics
Allicdata Part #:

IRF6150TR-ND

Manufacturer Part#:

IRF6150

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2P-CH 20V 7.9A FLIP-FET
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 7.9A 3W Surfac...
DataSheet: IRF6150 datasheetIRF6150 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.9A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 7.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-WFBGA
Supplier Device Package: 16-FlipFet™
Base Part Number: IRF6150
Description

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IRF6150 Application Field and Working Principle

IRF6150 is a type of vertical DMOS FET (field effect transistor), and is manufactured by International Rectifier (IR). This type of FET is designed for power transistor applications such as linear and switch mode power supplies, and is commonly used in switching applications. The IRF6150 has a maximum efficiency of more than 75 percent, and a maximum power dissipation of 11W.

The IRF6150 has a three terminal layout, with a gate, source and drain. The FET is capable of handling up to 60 volts of drain to source voltage (Vds), and can withstand a maximum current of 5 Amps. The maximum continuous gate to source voltage (Vgs) is 5 Volts, and the gate to source capacitance (Cgs) is 4nF.

In operation, when the voltage applied to the gate terminal is above the threshold Vtt (threshold voltage), the conductivity of the device increases. When the gate voltage is below the Vtt, the conductivity of the device decreases, effectively turning the device off. This allows a user to control the current flowing through the FET using a logic control signal.

The IRF6150 is typically used in switching applications, and can be used to switch a load from one load to another in an efficient manner. It is also commonly used in switching mode power supplies, which involve the rapid switching of power between multiple load sources. The IRF6150 is designed for fast switching speeds, and has an RDS(on) of 12 mOhms, making it suitable for switching applications.

The IRF6150 can be used in a variety of applications, and is often used as the switching element in power conversion systems. It is also used in a variety of power amplifier designs, as well as motor and lighting control circuits. The device is commonly used in automotive and aviation applications, as it is capable of handling high power, and has low operating temperature requirements.

Although the IRF6150 can be used in a variety of applications, it is best used in applications that require high efficiency and low noise operation. Its high switching speed and low RDS(on) rating make it an ideal choice for highly efficient power conversion and switching applications. The device is also reliable, with a minimum MTBF (Mean Time Between Failures) of more than one million hours.

The IRF6150 is a versatile component, and is capable of supplying power to high power loads, while not sacrificing efficiency or reliability. It is an ideal solution for a wide range of power control and switching applications.

The specific data is subject to PDF, and the above content is for reference

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