IRF6626TRPBF

Vgs(th) (Max) @ Id:	2.35V @ 250µA
Package / Case:	DirectFET™ Isometric ST
Supplier Device Package:	DIRECTFET™ ST
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.2W (Ta), 42W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2380pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	5.4 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	16A (Ta), 72A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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<p>IRF6626TRPBF is a single N-channel HEXFET power MOSFET. It is also classifed as a vertical DMOS FET. It is suitable for use in a variety of power conversion applications such as switch mode power supplies and DC-DC converters. The FET is specifically designed for 3.3V and 5V logic level applications.</p><p>The IRF6626TRPBF has a maximum drain current rating of 20A and a P-Channel with a maximum of 2.7V drain-source breakdown voltage. It has a maximum turn-off gate to source voltage (Vgs) of -20V and a maximum drain to source voltage (Vds) of 60V. The operating temperature range of this FET is -55°C to +150°C.</p><p>This MOSFET has very low on-state-resistance. It is typically specified for 0.195 ohms for 3.3V logic gates, and 0.2 ohms for 5V logic gates. The IRF6626TRPBF also has a high switching speed, typically 0.7nsec and a very low input capacitance of 35pf. This makes it suitable for switched-mode applications.</p><p>This FET’s application field primarily lies in the medium-power switching applications, with high-effectiveness and low-power dissipation. It is widely used in power supplies, DC-DC converters and small-signal amplifiers, as well as any other application where a medium-power general purpose switching FET is used.</p><p>The FET is used primarily for power switching applications. In most applications, the FET is used to control the flow of current from source to drain. The current is switched on and off by the voltage maintained at the gate of the FET. When the voltage is increased above the turn-on threshold, the FET turns on and allows current to flow from source to drain. Conversely, when the voltage is decreased below the turn-off threshold, the FET turns off, blocking the current flow.</p><p>This process of controlling current flow is known as the working principle of the FET. In the case of an IRF6626TRPBF, the voltage applied to the gate is typically lowered below -3V in the off-state and above +3V in the on-state. This gate voltage requires a gate current, typically between 5mA and 10mA.</p><p>The application and working principle of the IRF6626TRPBF make it a very versatile device suitable for a variety of power management, power control, and power conversion applications. Its high switching speed and low on-resistance make it a good choice for use in power supplies, DC-DC converters, and other applications that require highly efficient and reliable switching.</p>

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