Allicdata Part #: | IRF6716MTRPBFTR-ND |
Manufacturer Part#: |
IRF6716MTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 39A DIRECTFET |
More Detail: | N-Channel 25V 39A (Ta), 180A (Tc) 3.6W (Ta), 78W (... |
DataSheet: | IRF6716MTRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.4V @ 100µA |
Package / Case: | DirectFET™ Isometric MX |
Supplier Device Package: | DIRECTFET™ MX |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 78W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5150pF @ 13V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.6 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 39A (Ta), 180A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF6716MTRPBF, a power metal oxide semiconductor field-effect transistor (MOSFET), belongs to the category of single FETs or MOSFETs and is used in a wide range of applications, including switching power management, audio/video processing, automotive, industrial control and networking, and lighting. This type of transistor has many electrical properties, and its working principle is based on a number of physical phenomena such as electrostatics, electron tunneling, and energy dependent band gap.
To understand how a power MOSFET works, one needs to understand the structure of the transistor, which is made up of three basic components: the source, the gate, and the drain. The source and the drain are two types of junctions in depletion mode, while the gate is a control terminal where voltage is applied. The source is negatively charged, the gate positively charged, and the drain positively charged.
When a voltage is applied to the gate, the electrons in the source-drain region experience a force, known as the electric field, that increases the potential difference between the source and the drain. This potential difference, when greater than a certain threshold voltage, will trigger inversion layer formation between the source and the drain, allowing current to flow across the device. It is this phenomenon of voltage-dependent current flow, known as transconductance, that forms the basis of the transistor\'s working principle.
IRF6716MTRPBF is suitable for a wide range of applications due to its high current handling capacity, low on-state resistance, fast switching speed, and low gate drive power requirements. In high-power applications, it is used to switch DC to AC, make soft-starts, sense motor overloads, and protect household circuits from high currents. This device can also be used for motor control, switching loads, and generating pulse-width modulation signals. It is also commonly used in low-frequency applications for protection and control circuits in consumer electronics and automotive electronics.
In applications that require low gate drive voltage and current, such as logic level circuits, IRF6716MTRPBF is used because of its low drive threshold requirement. Additionally, the device can operate at high temperatures without much degradation, making it suitable for automotive applications. It is also used in display driver applications and LED lighting systems.
The IRF6716MTRPBF is a powerful transistor and is used in a wide range of applications due to its working principle, which is based on transconductance. Its multiple electrical properties, such as high current handling capacity, low on-state resistance, fast switching speed, and low gate drive power requirements make it suitable for various applications, from high-power switching to logic level circuits. Its ability to operate in high temperatures without much degradation makes it an excellent choice for automotive and other applications involving temperature extremes.
The specific data is subject to PDF, and the above content is for reference
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