IRF6727MTR1PBF

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The IRF6727MTR1PBF is a surface mount 180V N-Channel PowerTrenchMOSFET transistor manufactured by International Rectifier, a division of Infineon Technologies AG. The IRF6727MTR1PBF is a single N-Channel enhancement mode MOSFET that comes in a convenient TO-252 (Dpak) package. This MOSFET is designed to provide good performance in both low andhigh power applications. Its features include low on-state resistance, fast switching characteristics, and low gate charge.

The IRF6727MTR1PBF is suitable for power supply, lighting, rectifiers, automotive and consumer electronics applications. It can be used in a wide range of switching and linear applications such as power switches, converters, motor control, and battery management. The IRF6727MTR1PBF can be used as a switch to control inrush current, pulse width modulation, and noise reduction. It can also be used as a linear device for such applications as voltage regulation, current regulation, and voltage current amplifiers.

The IRF6727MTR1PBF is built with a N-Channel enhancement mode MOSFET utilizing International Rectifier\'s PowerTrenchMOSFETtechnology. This MOSFET technology is capable of providing superior performance and superior efficiencyO in switching applications. The technology provides high power density, which is enabled by its low on-state resistance, low gate charge, and fast switching capability. The N-channel MOSFET design also helps to provide a wide variety of benefits such as low current leakage, low thermal resistance, and minimal thermal noise. The IRF6727MTR1PBF also has increased reliability due to its high-speed switching and temperature robustness.

The IRF6727MTR1PBF uses Gate-Source voltage as its main working electrical parameter. This voltage determines how the transistor will behave in various situations, and is used to turn ON and OFF the device in different ways. When the gate-source voltage is raised beyond the threshold voltage (Vt) of the IRF6727MTR1PBF, the two MOS capacitors within the device turn ON and start conducting. The device will then be fully saturated and can draw current. The IRF6727MTR1PBF can be turned OFF by reducing the gate-source voltage below the threshold voltage. It also has internal protection mechanisms that can protect the device from damage due to overcurrent or reversed current.

The IRF6727MTR1PBF is one of the most widely used MOSFETs for power switching and linear applications. Its features make it highly versatile, enabling it to be used in a variety of applications. The device can provide good performance in both low and high power conditions due to its high on-state resistance, low gate charge, and fast switching characteristics. Its reliability is also enhanced by its temperature robustness and low current leakage capability. This MOSFET is suitable for power supply, lighting, rectifiers, automotive and consumer electronics applications.

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