| Allicdata Part #: | IRF6218PBF-ND |
| Manufacturer Part#: |
IRF6218PBF |
| Price: | $ 1.98 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 150V 27A TO-220AB |
| More Detail: | P-Channel 150V 27A (Tc) 250W (Tc) Through Hole TO-... |
| DataSheet: | IRF6218PBF Datasheet/PDF |
| Quantity: | 3342 |
| 1 +: | $ 1.98000 |
| 10 +: | $ 1.92060 |
| 100 +: | $ 1.88100 |
| 1000 +: | $ 1.84140 |
| 10000 +: | $ 1.78200 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 250W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2210pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 150 mOhm @ 16A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IRF6218PBF is a type of N-channel MOSFET which belongs to the MOSFETs - Single family of transistors. This power MOSFET offers superior performance in high-speed switching applications. It is a high-performance device that is typically found in high-end applications, due to its high breaking down voltage, low on-resistance, and low gate charge.
The IRF6218PBF has a drain current of 16 A. This makes it suitable for applications that require large amounts of current to be handled in a quick, efficient manner. The device also features low leakage current, which is important in applications that require high levels of power efficiency. The maximum voltage is rated at 70V, making it suitable for applications that require a higher voltage supply.
The device also features a high voltage rating, with a maximum breakdown voltage of 35V. The maximum power dissipation of the device is 385W; this makes it suitable for high-power applications. The maximum operating temperature of the device is +175 C. The device also features a high-temperature capability of up to +225 C.
The working principle of the device is based on the principles of electro-mechanical transistors. When a voltage is applied to the gate, it causes a current to flow through the device. This current controls the flow of current between the drain and the source. The current is varied by varying the drain-source voltage. When the source-drain voltage is increased, the current increases, and when it is decreased, the current decreases.
The IRF6218PBF is commonly used in applications such as power supply units, power management systems, DC-DC converters, high-speed switching, motor drivers, automotive electronics, communication systems, solar energy systems and industrial equipment. The device can be used in switch-mode power supplies and voltage regulators, as well as switching in the transmission of power from one circuit to another. Additionally, it can be used in high-frequency circuits, such as radio frequency applications.
The IRF6218PBF is a versatile device that offers high performance in many applications. The device is highly reliable and has a wide range of features that make it suitable for a variety of applications. This power MOSFET offers excellent performance in high-speed switching applications, and its performance makes it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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IRF6218PBF Datasheet/PDF