IRF6638TR1PBF

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The IRF6638TR1PBF is an N-Channel 55V power MOSFET, with a drain-source voltage of 55V, a maximum current of 99ARMS, and an RDS of 0.073ohms. This component is specifically designed for Switch Mode Power Supplies (SMPS) applications, such as large screen TVs or DVD players. It is perfect for this application due to its low on-resistance, peak pulse power and surge current capability.

The IRF6638TR1PBF belongs to a family of components known as Field Effect Transistors (FETs). FETs are unipolar transistors, meaning they have just one type of conductivity carrier: either electrons (in the case of N-channel FETs) or holes (in the case of P-channel FETs). In either case, an electric field is used to control the flow of current from the source to the drain. In the case of the IRF6638TR1PBF, it is an N-channel FET which is normally non-conducting until the electric field around the gate is strong enough to overcome the insulation barrier and allow current to flow through.

The IRF6638TR1PBF is a type of MOSFET, or Metal Oxide Semiconductor Field Effect Transistor. This means it uses a metal oxide layer between the gate and the rest of the transistor to both insulate the gate electrically and act as a gate dielectric. This layer allows for a higher voltage to be applied to the gate, thus increasing the performance of the transistor. The IRF6638TR1PBF is a single FET, meaning it has just one field effect region, or gate.

The IRF6638TR1PBF is designed to be used in applications requiring high current handling capabilities while still providing a low on-resistance. It is ideal for power handling applications such as switching power supplies, where the high current handling is needed and the low on-resistance is advantageous for reducing power losses. The IRF6638TR1PBF can handle a peak current of 99ARMS and a continuous drain current of 75ARMS, with an RDS at a meager 0.073ohms.

The IRF6638TR1PBF is also designed with a wide range of parasitic protection features. This includes a fifth lead designed to shunt any ESD pulses to ground and reduce the risk of damage to the transistor, a thermally resistant packaging design, and an integrated high frequency boost capacitor. This allows the IRF6638TR1PBF to be used in almost any environment, from high power switching applications to more sensitive low noise amplifier designs.

In summary, the IRF6638TR1PBF is an N-channel 55V power MOSFET, specifically designed for Switch Mode Power Supplies (SMPS) applications. It belongs to the family of components known as Field Effect Transistors (FETs), and is a type of MOSFET, or Metal Oxide Semiconductor Field Effect Transistor. It has a low on-resistance, a peak pulse power and surge current capability, and a range of parasitic protection features, making it perfect for applications requiring high current handling capabilities while still providing a low on-resistance.

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