IRF6811STRPBF

Vgs(th) (Max) @ Id:	2.1V @ 35µA
Package / Case:	DirectFET™ Isometric SQ
Supplier Device Package:	DIRECTFET™ SQ
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Ta), 32W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1590pF @ 13V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	3.7 mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	19A (Ta), 74A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The IRF6811STRPBF is an enhancement mode MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) component made by the International Rectifier Corporation. It is a P-type MOSFET device, with a drain-source voltage (VDS) of 20 volts and a maximum drain current (ID) of 0.137 A. This MOSFET is also RoHS compliant and transistor-ready, making it an ideal component for a wide range of applications.

The IRF6811STRPBF is a versatile component, with a broad range of uses and applications. Its high rated threshold voltage (VGS) of 6 volts makes it suited for controlling loads, while its low on-resistance enables it to handle wide voltage ranges with relative ease. Additionally, its superior switching characteristics and robust construction make it ideal for use in electric motor and motor control applications, such as DC-DC converter and dc power regulator applications. This MOSFET is also capable of providing reliable and robust protection for a wide range of electronic components and systems, making it a perfect choice for protection from overloads and short circuits.

The IRF6811STRPBF also has some interesting features that make it a great choice for many applications. It is designed to work with a wide range of loads, from low-power switching applications to high-power loads. It can handle both ac and dc loads, with a maximum operating temperature of 150°C. Additionally, its high input specs, with an input gate threshold voltage (VGS) of 10 volts and a gate-source breakdown voltage (BVGS) of 20 volts, ensure reliable operation in even the most stringent conditions.

The IRF6811STRPBF works through a process known as the “Depletion Mode”. In this process, when the voltage at the Gate reaches the threshold voltage, the Gate opens and a current called the Drain-source current (IDSS) begins to flow. This current is often referred to as the “saturation current” and is regulated by the bias at the Gate. The higher the Gate voltages, the greater the saturation current. The saturation current also depends on the voltage between the Drain and Source terminals, with higher voltages causing higher saturation currents.

Once the Gate voltage reaches the threshold, the MOSFET starts to saturate and the Drain-source current reaches the maximum allowable value. The current is then regulated by the applied voltage between Drain and Source to maintain this maximum. As the voltage between the Drain and Source increases, the magnitude of the saturation current reduces. Similarly, when the Drain-source voltage falls below the threshold voltage, the MOSFET enters the “non-conducting” state and no current can flow.

The IRF6811STRPBF is a great choice for a wide range of applications and projects, from low-power switching to high-power loads and from ac or dc loads to protection against short circuits. Its high rated threshold voltage, low on-resistance, robust construction, and superior switching characteristics make it a great choice for many applications. Additionally, its ability to work with a wide range of loads and to provide reliable protection makes it an excellent choice for projects that require dependable and reliable performance.

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