IRF9388PBF Allicdata Electronics
Allicdata Part #:

IRF9388PBF-ND

Manufacturer Part#:

IRF9388PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 30V 12A 8-SO
More Detail: P-Channel 30V 12A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF9388PBF datasheetIRF9388PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 12A, 20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IRF9388PBF is a type of single field-effect transistor (FET) that is widely used in the electronics industry. It is manufactured by International Rectifier and is used in a variety of applications ranging from power amplifiers and high-frequency switching to low-noise amplifiers, protection circuits, and low-power and low-cost inverters. Its features, such as low gate-source capacitance and high breakdown voltage, make it an ideal choice for use in a variety of applications, including high-speed logic gates, power MOSFET drivers, and motor control.

A field-effect transistor is a voltage-controlled semiconductor device in which current flows between two electrodes, called the source and the drain, when a voltage is applied to the gate. FETs are divided into three distinct types, namely MOSFETs, JFETs and IGFETs. The IRF9388PBF is a Metal-Oxide Semiconductor FET (MOSFET), which is the most commonly used of the three types. MOSFETs rely on a gate voltage to control the flow of an electrical signal, thus making them very efficient and suitable for high-speed switching applications.

The IRF9388PBF has a drain current rating of 2.5 A and a drain source voltage of 500 V, making it suitable for a variety of power applications. It has a maximum power dissipation of 33 W, allowing it to operate in a wide range of temperatures. Additionally, its low gate-source capacitance of 18 pF makes it an ideal choice for use in high-frequency applications. In addition, it has a maximum drain-source breakdown voltage of 500 V, which provides it with protection against high-voltage transients.

The working principle of the IRF9388PBF is fairly simple. When a voltage is applied to its gate, it allows current to flow from the drain to the source. When the gate voltage is removed, the current flow stops. This makes it an ideal choice for power control applications as it allows for fast and accurate switching. Additionally, because it is a voltage-controlled device, it can be used to regulate the output power of an electrical circuit by controlling the gate voltage.

The IRF9388PBF is a versatile single-FET device that is suitable for a variety of applications. Its features, such as high drain current rating, low gate-source capacitance, and high power dissipation, make it an ideal choice for use in power applications such as switching, protection circuits, and inverters. Additionally, its voltage-controlled nature makes it ideal for use in precision power control applications.

The specific data is subject to PDF, and the above content is for reference

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