| Allicdata Part #: | IRF9Z14STRLPBF-ND |
| Manufacturer Part#: |
IRF9Z14STRLPBF |
| Price: | $ 0.72 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 60V 6.7A D2PAK |
| More Detail: | P-Channel 60V 6.7A (Tc) 3.7W (Ta), 43W (Tc) Surfac... |
| DataSheet: |  IRF9Z14STRLPBF Datasheet/PDF |
| Quantity: | 1000 |
| 800 +: | $ 0.65134 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.7W (Ta), 43W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 500 mOhm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.7A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The IRF9Z14STRLPBF is a high-performance, low-power MOSFET. This power MOSFET is a logic level gate, meaning that the threshold voltage is relatively low, making it suitable for driving MOSFETs with very low gate drive requirement. Additionally, the IRF9Z14STRLPBF has an internal electrostatic discharge (ESD) protection circuit, making it resistant to static electricity damage, making it a safe and reliable choice in various applications.
This type of MOSFET is suitable for many power applications, including DC-DC converters, high frequency switching, and high-speed switching applications. Furthermore, the IRF9Z14STRLPBF is capable of delivering high levels of current over a wide range of temperatures, and very efficient when switching on and off.
The IRF9Z14STRLPBF operates with a tall channel structure and is suitable for operation at high temperatures, up to 175° Celsius, making it suitable for a wide range of applications. This MOSFET also employs a vertical structure to reduce an...
The specific data is subject to PDF, and the above content is for reference
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