IRF9410TR Allicdata Electronics
Allicdata Part #:

IRF9410TR-ND

Manufacturer Part#:

IRF9410TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 7A 8-SOIC
More Detail: N-Channel 30V 7A (Ta) 2.5W (Ta) Surface Mount 8-SO
DataSheet: IRF9410TR datasheetIRF9410TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF9410TR is a transistor specifically designed for use in both switching and linear types of amplifications and applications. It is a single N-channel MOSFET, as it is able to function even when the voltage of the gate is relatively much less than the voltage of the drain. This semiconductor device has ratings that are suitable for a wide range of applications, and is especially useful in controlling the speed of high-voltage motors.

The transistor features a Vdss (drain-source voltage) of 900V, a Rds (drain-source on-state resistance) of 12.4mΩ, a Pd (dissipation power) of 10W, and a gate charge of 38nC, making it a powerful device when it comes to voltage capacities and power management.

However, the main function of the IRF9410TR is as a high-performance, high-speed N-channel power MOSFET trans-conductance amplifier. Its trans-conductance enables it to act as both a current control device and a voltage control device, while its wide operating temperature range of –55°C to 150°C allows it to be used in a wide range of environments. Additionally, the device has a very low gate to source capacitance and a very low input capacitance which increases its effectiveness as a high-speed amplifier.

The IRF9410TR also features a wide dynamic range, a low power consumption, and low distortion. The power consumption of this device is 0.025W, compared to the higher power consumption of some other types of transistors. It also features a low thermal resistance when operated open with a 0.6 voltage. The device also has a temperature coefficient of 1.8V/°C and excellent stability during operation.

The IRF9410TR MOSFET transistor can be used in various kinds of applications. These include power switching and power regulation, driver and controller circuits, high-frequency switching, as well as various kinds of communication equipment. It is also used in wireless networks, motor controls, power amplifiers, and various kinds of industrial applications.

The working principle of the IRF9410TR is relatively simple. The device starts to operate when a certain voltage is applied to its gates, allowing the electrons to flow freely across the channel. The voltage at the gates determines how much current flows through the transistor. When the gates are connected to the source, current can flow in both directions. However, when the gates are connected to the drains, it creates a barrier that only allows the current to flow in one direction.

In conclusion, the IRF9410TR is a single N-channel MOSFET transistor. Its wide operating temperature range and low power consumption make it ideal for a range of power regulation and switching applications. The device also has a wide dynamic range, low distortion, and excellent thermal stability. As it provides high control over the voltages and currents, it is used in various kinds of applications, such as in motor control, wireless communications, and industrial control.

The specific data is subject to PDF, and the above content is for reference

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