IRF9510L Allicdata Electronics
Allicdata Part #:

IRF9510L-ND

Manufacturer Part#:

IRF9510L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 100V 4A TO-262
More Detail: P-Channel 100V 4A (Tc) Through Hole I2PAK
DataSheet: IRF9510L datasheetIRF9510L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRF9510L is a moderated field effect transistor (MOSFET), ideal for applications where a high current and switching frequency is of importance. It has been designed to support extremely low static drain to source leakage and provide enhanced switching performance. It is suitable for switching the loads with high efficiency in amplified power applications, such as microcontrollers, DC-DC converters, solenoids, and relays.

IRF9510L’s features include high speed operation with fast switching times, low power dissipation, wide gate threshold voltage (VGS) range, and low on resistance. It also features low Qg and Qgs which reduce the oscillation frequency and EMI. It also has enhanced static dV/dt protection.

The IRF9510L is fabricated on a high-temperature process and has a drain to source voltage rating (Vdss) of 100V, a current threshold (Igt) of 0.5A and maximum on-state resistance of 0.4Ω. It is available in a TO-220 package, surface mount packages and both vertical and horizontal D-Pak packages. Its maximum junction temperature is +150°C, making it especially suitable for use in high-temperature environments.

The working principle of IRF9510L is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), also known as a “Field Effect Transistor” or FET. It is a voltage-controlled device, which means that the current flowing through it can be controlled by the voltage applied to its terminals. A FET consists of three terminals, the gate, the source, and the drain. When the gate voltage rises above a certain threshold voltage (Vth), the current between the drain and the source increases. This is because the MOSFET acts like a switch, with the gate controlling the current between the source and drain when the gate voltage is above Vth.

The IRF9510L is a n-channel enhancement mode transistor. It is similar to other n-channel enhancement mode MOSFETs in that both the gate voltage and the drain-source voltage must exceed the threshold voltage (Vth) for the device to begin conducting. The gate and drain voltages, however, must exceed the threshold voltage (Vth) by less in the case of the IRF9510L than they would in the case of a standard n-channel enhancement mode transistor.

The IRF9510L can be used in a variety of applications, including switches, electrical relays, DC-DC converters and microcontrollers. It is especially suitable for applications where a high current and switching frequency are of importance. It is a reliable and efficient device, capable of switching loads with little power dissipation and high speed. This makes it ideal for use in high-temperature applications, such as automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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