IRF9510L Allicdata Electronics
Allicdata Part #:

IRF9510L-ND

Manufacturer Part#:

IRF9510L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 100V 4A TO-262
More Detail: P-Channel 100V 4A (Tc) Through Hole I2PAK
DataSheet: IRF9510L datasheetIRF9510L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF9510L is a moderated field effect transistor (MOSFET), ideal for applications where a high current and switching frequency is of importance. It has been designed to support extremely low static drain to source leakage and provide enhanced switching performance. It is suitable for switching the loads with high efficiency in amplified power applications, such as microcontrollers, DC-DC converters, solenoids, and relays.

IRF9510L’s features include high speed operation with fast switching times, low power dissipation, wide gate threshold voltage (VGS) range, and low on resistance. It also features low Qg and Qgs which reduce the oscillation frequency and EMI. It also has enhanced static dV/dt protection.

The IRF9510L is fabricated on a high-temperature process and has a drain to source voltage rating (Vdss) of 100V, a current threshold (Igt) of 0.5A and maximum on-state resistance of 0.4Ω. It is available in a TO-220 package, surface mount packages and both vertical and horizontal D-Pak packages. Its maximum junction temperature is +150°C, making it especially suitable for use in high-temperature environments.

The working principle of IRF9510L is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), also known as a “Field Effect Transistor” or FET. It is a voltage-controlled device, which means that the current flowing through it can be controlled by the voltage applied to its terminals. A FET consists of three terminals, the gate, the source, and the drain. When the gate voltage rises above a certain threshold voltage (Vth), the current between the drain and the source increases. This is because the MOSFET acts like a switch, with the gate controlling the current between the source and drain when the gate voltage is above Vth.

The IRF9510L is a n-channel enhancement mode transistor. It is similar to other n-channel enhancement mode MOSFETs in that both the gate voltage and the drain-source voltage must exceed the threshold voltage (Vth) for the device to begin conducting. The gate and drain voltages, however, must exceed the threshold voltage (Vth) by less in the case of the IRF9510L than they would in the case of a standard n-channel enhancement mode transistor.

The IRF9510L can be used in a variety of applications, including switches, electrical relays, DC-DC converters and microcontrollers. It is especially suitable for applications where a high current and switching frequency are of importance. It is a reliable and efficient device, capable of switching loads with little power dissipation and high speed. This makes it ideal for use in high-temperature applications, such as automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IRF9" Included word is 40
Part Number Manufacturer Price Quantity Description
IRF9540NSTRRPBF Infineon Tec... -- 1000 MOSFET P-CH 100V 23A D2PA...
IRF9328TRPBF Infineon Tec... -- 16000 MOSFET P-CH 30V 12A 8-SOI...
IRF9540S Vishay Silic... -- 1000 MOSFET P-CH 100V 19A D2PA...
IRF9Z24 Vishay Silic... -- 1000 MOSFET P-CH 60V 11A TO-22...
IRF9383MTR1PBF Infineon Tec... 0.0 $ 1000 MOSFET P-CH 30V 22A DIREC...
IRF9640SPBF Vishay Silic... 1.58 $ 1948 MOSFET P-CH 200V 11A D2PA...
IRF9388TRPBF Infineon Tec... -- 1000 MOSFET P-CH 30V 12A 8-SOI...
IRF9Z34NSTRRPBF Infineon Tec... -- 1000 MOSFET P-CH 55V 19A D2PAK...
IRF9383MTRPBF Infineon Tec... 0.81 $ 1000 MOSFET P-CH 30V 22A DIREC...
IRF9530PBF Vishay Silic... -- 3266 MOSFET P-CH 100V 12A TO-2...
IRF9540NSPBF Infineon Tec... -- 1007 MOSFET P-CH 100V 23A D2PA...
IRF9530S Vishay Silic... 0.0 $ 1000 MOSFET P-CH 100V 12A D2PA...
IRF9540STRR Vishay Silic... 0.0 $ 1000 MOSFET P-CH 100V 19A D2PA...
IRF9956TR Infineon Tec... -- 1000 MOSFET 2N-CH 30V 3.5A 8-S...
IRF9540NSTRLPBF Infineon Tec... -- 1600 MOSFET P-CH 100V 23A D2PA...
IRF9389TRPBF Infineon Tec... -- 24000 MOSFET N/P-CH 30V 6.8A/4....
IRF9520NL Infineon Tec... 0.0 $ 1000 MOSFET P-CH 100V 6.8A TO-...
IRF9410PBF Infineon Tec... -- 1000 MOSFET N-CH 30V 7A 8-SOIC...
IRF9332PBF Infineon Tec... 0.0 $ 1000 MOSFET P-CH 30V 9.8A 8SOI...
IRF9530SPBF Vishay Silic... 1.61 $ 8051 MOSFET P-CH 100V 12A D2PA...
IRF9Z24NL Infineon Tec... 0.0 $ 1000 MOSFET P-CH 55V 12A TO-26...
IRF9610L Vishay Silic... 0.0 $ 1000 MOSFET P-CH 200V 1.8A TO-...
IRF9510S Vishay Silic... -- 1000 MOSFET P-CH 100V 4A D2PAK...
IRF9Z24NLPBF Infineon Tec... 0.0 $ 1000 MOSFET P-CH 55V 12A TO-26...
IRF9620L Vishay Silic... 0.0 $ 1000 MOSFET P-CH 200V 3.5A TO-...
IRF9610 Vishay Silic... -- 1000 MOSFET P-CH 200V 1.8A TO-...
IRF9610S Vishay Silic... -- 1000 MOSFET P-CH 200V 1.8A D2P...
IRF9530NSPBF Infineon Tec... 0.0 $ 1000 MOSFET P-CH 100V 14A D2PA...
IRF9Z34PBF Vishay Silic... -- 1435 MOSFET P-CH 60V 18A TO-22...
IRF9640STRRPBF Vishay Silic... 1.48 $ 1600 MOSFET P-CH 200V 11A D2PA...
IRF9640LPBF Vishay Silic... -- 1000 MOSFET P-CH 200V 11A TO-2...
IRF9520L Vishay Silic... 0.0 $ 1000 MOSFET P-CH 100V 6.8A TO-...
IRF9Z24STRL Vishay Silic... 0.0 $ 1000 MOSFET P-CH 60V 11A D2PAK...
IRF9952TR Infineon Tec... -- 1000 MOSFET N/P-CH 30V 8-SOICM...
IRF9520NPBF Infineon Tec... -- 1048 MOSFET P-CH 100V 6.8A TO-...
IRF9540NL Infineon Tec... 0.0 $ 1000 MOSFET P-CH 100V 23A TO-2...
IRF9510 Vishay Silic... -- 1000 MOSFET P-CH 100V 4A TO-22...
IRF9540SPBF Vishay Silic... -- 923 MOSFET P-CH 100V 19A D2PA...
IRF9Z34S Vishay Silic... 0.0 $ 1000 MOSFET P-CH 60V 18A D2PAK...
IRF9Z24SPBF Vishay Silic... -- 288 MOSFET P-CH 60V 11A D2PAK...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics