Allicdata Part #: | IRF9620-ND |
Manufacturer Part#: |
IRF9620 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 200V 3.5A TO-220AB |
More Detail: | P-Channel 200V 3.5A (Tc) 40W (Tc) Through Hole TO-... |
DataSheet: | IRF9620 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF9620 is a popular N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) component available from International Rectifier Corporation. It is a single, relatively low power component, intended for use mainly in power management applications. It has a maximum drain current of 90A, drain-source on-state resistance of 2.2 milliohms, and maximum drain-source voltage of 20V. It is also known as an International Rectifier Power MOSFET.
The IRF9620 is mainly used in power management applications, such as to control and optimize power dissipation in power over Ethernet systems, industrial solenoid, LED lighting, motor control, and motor switching applications. It can also be used in other applications, such as in audio, voltage regulation, and battery charging applications.
This device utilizes the principle of metal oxide semiconductor (MOS) field effect transistor (FET) technology, which involves the use of a thin film of metal oxide (such as silicon dioxide or silicon nitride) that serves as the gate between the semiconductor material and the substrate material. The application of an electric field (voltage) across the oxide film changes its conductivity. By varying the voltage, the conductivity of the oxide can be modified, thereby controlling the current flow across the device. The IRF9620 uses a gate-to-source voltage of 20V and a maximum gate-to-drain voltage of 20V.
The IRF9620 has a threshold voltage, which is the voltage at which the device will begin to conduct current. This is usually set to 4.5V, but can be varied depending on the application. The device also has a breakdown voltage, which is the voltage at which the current conductivity will become unstable and eventually fail. The device has a maximum drain-source breakdown voltage of 20V.
The IRF9620 also has an on-resistance, which is the resistance across the drain and source contacts when the device is on. This is typically 2.2 milliohms and is mainly a function of temperature. The IRF9620 also has a maximum drain-source current rating of 90A, which is the amount of current that can flow between the drain and source contacts.
The IRF9620 is a popular choice for power management applications because it is easy to use and has a high reliability. It is also electrically and thermally very robust, making it suitable for use in a variety of applications. Its on-resistance, breakdown voltage, and maximum drain-source current rating make it a reliable choice for controlling and optimizing power dissipation.
The specific data is subject to PDF, and the above content is for reference
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IRF9530S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A D2PA... |
IRF9530STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A D2PA... |
IRF9540S | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 19A D2PA... |
IRF9540STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 19A D2PA... |
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