Allicdata Part #: | IRF9530-ND |
Manufacturer Part#: |
IRF9530 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 100V 12A TO-220AB |
More Detail: | P-Channel 100V 12A (Tc) 88W (Tc) Through Hole TO-2... |
DataSheet: | IRF9530 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 88W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 7.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF9530 is a type of Insulated Gate Bipolar Transistors (IGBT), which belongs to the family of Field Effect Transistors (FETs). It is a Single FET (SFET), which means it is comprised of a single component. This component is made of a N-channel FET, assembled on a 3-terminal chip.
IGBTs have become a popular component in the electronics industry due to their ability to provide high efficiency and good durability. The IRF9530 is an example of this, as it allows for efficient switching even at higher current levels. It has become a popular component due to its superior performance compared to other FETs.
The IRF9530 is often used in applications that require high-voltage and high-current switching. Such applications include motor control and power distribution, as well as the design of power electronic circuits. It is also commonly used in DC-DC converters, power supplies, and industrial inverters.
The working principle of the IRF9530 is similar to that of other FETs. It is based on the physical principle of field effect, wherein the current flow through the device is controlled by the electric field created around it. This field is created by applying a voltage to the gate terminal of the device. The voltage applied to the gate terminal modulates the electrical characteristics of the transistor and thus, regulates the current flow through it.
The IRF9530 is a good choice for applications that require high-voltage and high-current switching. It is also distinguished for its high efficiency, good ruggedness and reliability. Its superior switching performance, low on-resistance and low gate charge characteristics have enabled it to become a popular component in many power electronics applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IRF9520NLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 100V 6.8A TO2... |
IRF9Z30PBF | Vishay Silic... | 1.65 $ | 601 | MOSFET P-CH 50V 18A TO-22... |
IRF9540STRLPBF | Vishay Silic... | 0.99 $ | 1000 | MOSFET P-CH 100V 19A D2PA... |
IRF9Z14SPBF | Vishay Silic... | -- | 863 | MOSFET P-CH 60V 6.7A D2PA... |
IRF9Z24SPBF | Vishay Silic... | -- | 288 | MOSFET P-CH 60V 11A D2PAK... |
IRF9610SPBF | Vishay Silic... | -- | 425 | MOSFET P-CH 200V 1.8A D2P... |
IRF9383MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 30V 22A DIREC... |
IRF9540NLPBF | Infineon Tec... | -- | 1000 | MOSFET P-CH 100V 23A TO26... |
IRF9Z20PBF | Vishay Silic... | 1.51 $ | 88 | MOSFET P-CH 50V 9.7A TO-2... |
IRF9510 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 4A TO-22... |
IRF9630 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 6.5A TO-... |
IRF9640 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 200V 11A TO-2... |
IRF9520 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 6.8A TO-... |
IRF9610 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 1.8A TO-... |
IRF9530 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A TO-2... |
IRF9620 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 3.5A TO-... |
IRF9540 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 19A TO-2... |
IRF9Z34 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 18A TO-22... |
IRF9Z14 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 60V 6.7A TO-2... |
IRF9410 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 7A 8-SOIC... |
IRF9510S | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 4A D2PAK... |
IRF9520NS | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 100V 6.8A D2P... |
IRF9520S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 6.8A D2P... |
IRF9520STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 6.8A D2P... |
IRF9530NS | Infineon Tec... | -- | 1000 | MOSFET P-CH 100V 14A D2PA... |
IRF9530S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A D2PA... |
IRF9530STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A D2PA... |
IRF9540S | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 19A D2PA... |
IRF9540STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 19A D2PA... |
IRF9610S | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 1.8A D2P... |
IRF9620S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 200V 3.5A D2P... |
IRF9630S | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 6.5A D2P... |
IRF9640S | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 11A D2PA... |
IRF9640STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 200V 11A D2PA... |
IRF9Z14S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 60V 6.7A D2PA... |
IRF9Z24 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 11A TO-22... |
IRF9Z24NS | Infineon Tec... | -- | 1000 | MOSFET P-CH 55V 12A D2PAK... |
IRF9Z24S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 60V 11A D2PAK... |
IRF9Z24STRR | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 11A D2PAK... |
IRF9Z30 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 50V 18A TO-22... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
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