IRF9530 Allicdata Electronics
Allicdata Part #:

IRF9530-ND

Manufacturer Part#:

IRF9530

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 100V 12A TO-220AB
More Detail: P-Channel 100V 12A (Tc) 88W (Tc) Through Hole TO-2...
DataSheet: IRF9530 datasheetIRF9530 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF9530 is a type of Insulated Gate Bipolar Transistors (IGBT), which belongs to the family of Field Effect Transistors (FETs). It is a Single FET (SFET), which means it is comprised of a single component. This component is made of a N-channel FET, assembled on a 3-terminal chip.

IGBTs have become a popular component in the electronics industry due to their ability to provide high efficiency and good durability. The IRF9530 is an example of this, as it allows for efficient switching even at higher current levels. It has become a popular component due to its superior performance compared to other FETs.

The IRF9530 is often used in applications that require high-voltage and high-current switching. Such applications include motor control and power distribution, as well as the design of power electronic circuits. It is also commonly used in DC-DC converters, power supplies, and industrial inverters.

The working principle of the IRF9530 is similar to that of other FETs. It is based on the physical principle of field effect, wherein the current flow through the device is controlled by the electric field created around it. This field is created by applying a voltage to the gate terminal of the device. The voltage applied to the gate terminal modulates the electrical characteristics of the transistor and thus, regulates the current flow through it.

The IRF9530 is a good choice for applications that require high-voltage and high-current switching. It is also distinguished for its high efficiency, good ruggedness and reliability. Its superior switching performance, low on-resistance and low gate charge characteristics have enabled it to become a popular component in many power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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