IRF9328PBF Allicdata Electronics
Allicdata Part #:

IRF9328PBF-ND

Manufacturer Part#:

IRF9328PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 30V 12A 8-SO
More Detail: P-Channel 30V 12A (Tc) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF9328PBF datasheetIRF9328PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IRF9328PBF is a type of MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) developed by International Rectifier Corporation that offers ultra-low on-resistance, low capacitances and a wide variety of other features. It is commonly used in industries such as aerospace, medical, and industrial, but also is finding application in a wide variety of modern applications as well. This article will discuss the application fields of the IRF9328PBF, as well as its various working principles.

The IRF9328PBF is a depletion-type N-channel enhancement-mode MOSFET with a maximum drain-source voltage rating of 25 volts. It is a surface-mount device (SMD), meaning it is placed directly on the surface of a printed circuit board, or PCB. This makes the device suitable for use in a wide range of applications, such as power supplies, motor control, and audio power amplifiers. It also has excellent switching performance and low thermal resistance, making it an ideal choice for switching applications. Other features include an operating temperature range from -55℃ to +150℃ and a maximum ratings breakdown voltage of 100v.

Because of its low on-resistance, the IRF9328PBF is often used in applications that require the ability to switch large currents quickly and efficiently. This includes a variety of DC-DC converters and battery chargers, as well as any other application that requires high-speed switching. Additionally, the device is capable of switching at over 1MHz, making it a great choice for high-frequency applications such as digital signal processing and server/computer power supplies.

The working principle of the IRF9328PBF is pretty straightforward. When the gate voltage is increased from 0V to positive voltage, current begins to flow from the drain to the source. This is known as an enhancement-mode operation, which is one of the primary modes of operation for MOSFETs. As the gate voltage is increased further the drain-source current increases proportionally. The on-resistance of the device is determined by the gate-source voltage, and is typically very low in comparison to other types of MOSFETs. The device is also capable of blocking high voltage in both forward and reverse directions.

One of the primary advantages of the IRF9328PBF compared to other types of MOSFETs is its ultra-low on-resistance. This makes the device especially suitable for applications that require high-speed switching and large currents. Furthermore, the device also has exceptionally low input and output capacitances, making it an ideal choice for high-frequency applications. Finally, it is one of the most reliable devices currently available on the market due to its excellent switching and thermal resistance.

In conclusion, the IRF9328PBF is a reliable and efficient MOSFET designed for high-speed and efficient switching applications. It offers ultra-low on-resistance and low input and output capacitances, making it suitable for a variety of different applications. Additionally, it has excellent switching and thermal performance, making it one of the most reliable and powerful devices currently on the market.

The specific data is subject to PDF, and the above content is for reference

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