IRFP264 Allicdata Electronics
Allicdata Part #:

IRFP264-ND

Manufacturer Part#:

IRFP264

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 250V 38A TO-247AC
More Detail: N-Channel 250V 38A (Tc) 280W (Tc) Through Hole TO-...
DataSheet: IRFP264 datasheetIRFP264 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 75 mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFP264 is a widely used power MOSFET in the electronic industry. It belongs to the single-gated rated voltage FET (Field-effect Transistor) family and is widely used in the application of high-speed switching and low-pressure drop. It is also used in power devices in the fields of industrial and aviation applications, providing high performance and reliable service.

The working principle of the device is based on a Metal-Oxide-Semiconductor (MOS) structure. This allows for the flow of electric current between the source (S), gate (G), and drain (D) terminals. The channel in the FET is made up of a gate oxide, n-type semiconductor substrate, and source/drain contact regions. This structure allows for voltage to be applied to the gate terminal which controls the current flow between the source/drain terminals. The gate voltage creates a potential barrier in the channel which reduces the current flow.

One of the main advantages of a FET is that it has a much higher input impedance than a traditional BJT (Bipolar Junction Transistor). This is because the gate acts as a capacitor and the small amount of charge stored between the gate and the channel can switch the device off, preventing current flow. This feature makes FETs excellent for amplifiers and switching applications.

In addition, the IRFP264 is designed to be a low-noise device and has a high-frequency response which allows it to be used in high-frequency applications. It is also capable of withstanding higher voltages than other FETs due to its thicker gate oxide and more robust construction. As a result, it is a great choice for power converters, linear regulation circuits, motor-control circuits, and more.

In conclusion, the IRFP264 is a highly reliable and efficient single-gated MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is used in applications ranging from industrial and aviation to high-frequency switching and low-pressure drop. Its high impedance and excellent temperature stability make it an ideal choice for power management and converters.

The specific data is subject to PDF, and the above content is for reference

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