Allicdata Part #: | IRFP264-ND |
Manufacturer Part#: |
IRFP264 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 250V 38A TO-247AC |
More Detail: | N-Channel 250V 38A (Tc) 280W (Tc) Through Hole TO-... |
DataSheet: | IRFP264 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 280W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 75 mOhm @ 23A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFP264 is a widely used power MOSFET in the electronic industry. It belongs to the single-gated rated voltage FET (Field-effect Transistor) family and is widely used in the application of high-speed switching and low-pressure drop. It is also used in power devices in the fields of industrial and aviation applications, providing high performance and reliable service.
The working principle of the device is based on a Metal-Oxide-Semiconductor (MOS) structure. This allows for the flow of electric current between the source (S), gate (G), and drain (D) terminals. The channel in the FET is made up of a gate oxide, n-type semiconductor substrate, and source/drain contact regions. This structure allows for voltage to be applied to the gate terminal which controls the current flow between the source/drain terminals. The gate voltage creates a potential barrier in the channel which reduces the current flow.
One of the main advantages of a FET is that it has a much higher input impedance than a traditional BJT (Bipolar Junction Transistor). This is because the gate acts as a capacitor and the small amount of charge stored between the gate and the channel can switch the device off, preventing current flow. This feature makes FETs excellent for amplifiers and switching applications.
In addition, the IRFP264 is designed to be a low-noise device and has a high-frequency response which allows it to be used in high-frequency applications. It is also capable of withstanding higher voltages than other FETs due to its thicker gate oxide and more robust construction. As a result, it is a great choice for power converters, linear regulation circuits, motor-control circuits, and more.
In conclusion, the IRFP264 is a highly reliable and efficient single-gated MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is used in applications ranging from industrial and aviation to high-frequency switching and low-pressure drop. Its high impedance and excellent temperature stability make it an ideal choice for power management and converters.
The specific data is subject to PDF, and the above content is for reference
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