| Allicdata Part #: | IRFPG30-ND |
| Manufacturer Part#: |
IRFPG30 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 1000V 3.1A TO-247AC |
| More Detail: | N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole T... |
| DataSheet: | IRFPG30 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 125W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 980pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 5 Ohm @ 1.9A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.1A (Tc) |
| Drain to Source Voltage (Vdss): | 1000V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRFPG30 is a n-channel power MOSFET (metal oxide semiconductor field-effect transistor). It is an insulated gate type of device so the gate does not actually make contact with the channel. The flow of current is instead modulated by the electric field generated between the gate and source terminals. It belongs in the family of “ enhancement mode MOSFETs”, meaning it requires an externally applied positive voltage to the gate to trigger it into a conductive state (in contrast to depletion mode devices, which are conductive by default).
The mosfet is one of the key components in electronics due to its excellent switching speed, low on-resistance, and the ability to operate with high-frequency pulses. When used in electronic circuits, it allows for more accurate control of current flow than can be achieved with traditional resistor-based components. The IRFPG30 is a good choice for use in this type of application due to its high efficiency, low gate charge, high frequency capabilities, and good dv/dt immunity.
This type of MOSFET can be utilized in a wide range of settings, from industrial equipment to consumer electronics. In industrial applications, it is often found in DC motor control circuits,where it can be used to speed up or slow down the motor by allowing current to flow through it at different rates. In consumer electronics, it is frequently used in power circuitry to control the amount of electricity supplied to a device, such as a laptop battery or an AC adapter. It can also be used in audio amplifiers, DC converters, and mobile phones.
The working principle of the IRFPG30 is fairly simple. When a voltage is applied across the gate and source terminals, an electric field is generated between them, causing the impedance between the terminals to decrease. This allows more current to flow between the channels, increasing their conductivity and allowing for current to flow through them. By adjusting the gate voltage, it is possible to control the amount of current that is allowed to pass, allowing for precise control of the power output of the device.
In conclusion, the IRFPG30 is a n-channel power MOSFET which belongs to the enhancement mode family. It is a versatile electronic component that offers excellent switching speed, low on-resistance, high frequency capabilities, and good dv/dt immunity. It is suitable for a wide range of applications, from industrial equipment to consumer electronics, and can be used to control current flow in various ways. The working principle is based on an electric field being generated between the gate and source terminals when a voltage is applied across them, which causes the impedance between the terminals to decrease and allows for current flow.
The specific data is subject to PDF, and the above content is for reference
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IRFPG30 Datasheet/PDF