
Allicdata Part #: | IRFP244-ND |
Manufacturer Part#: |
IRFP244 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 250V 15A TO-247AC |
More Detail: | N-Channel 250V 15A (Tc) 150W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFP244 is a symmetrical N-channel enhancement mode power field-effect transistor of VDSS 25V. It is suitable for applications such as DC/DC converters, level shifters, bridge circuits, DC choppers, motor speed control and various telecomm circuits. It has a smooth-operating surface mount package (SO-8) making it ideal for use in any circuit requiring low loss performance.
A field-effect transistor (FET) is an electronic device consisting of a semiconductor channel, typically silicon or a high-electron-mobility transistor (HEMT), used to control current flow. FETs can be used in analog or digital circuits, whichever is more appropriate. FETs can take the place of conventional transistors in many applications, because they are capable of providing higher gains and lower power consumption. FETs are available in a variety of packages, each designed for a specific application.
The IRFP244 is an N-channel Field-Effect Transistor (FET) with symmetrical drain-source breakdown characteristics. It has an extremely low on-state resistance, RDS(on), when compared to standard MOSFETs. This makes it ideal for use in high-current, low-voltage DC/DC converters, as well as power switching circuits.
The IRFP244 has a simple working principle, which can be understood as follows. When no input voltage is applied, the FET is in the off state and no current flows through it. When a positive voltage is applied between the drain and source pins, it creates a conductive channel between them, allowing current to flow. This is referred to as “turning on” the FET. The strength of the pull-down (or pull-up) voltage is proportional to the applied drain-source voltage, which is adjustable through the gate terminal. The FET can be turned “off” by applying a negative voltage between the gate and source pins.
IRFP244 can be used in a variety of power converter and switching circuits, such as DC/DC converter circuits, charge pumps, level shifters, and motor speed controllers. It can also be used in various telecomm circuits. Its symmetrical drain-source breakdown characteristics make it ideal for applications with higher currents and lower voltages. The IRFP244 is particularly useful in high-side switching circuits, as the input terminal is connected to the load and not to the negative supply. The SO-8 package makes it easy to integrate into a minimum component count application.
The IRFP244 is a popular choice for many power switching applications and can provide excellent performance, low power consumption, and improved reliability compared to traditional transistors. Its SO-8 package allows for easy integration into any circuit and its symmetrical drain-source breakdown characteristics make it ideal for applications requiring higher current and lower voltage operation.
The specific data is subject to PDF, and the above content is for reference
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