| Allicdata Part #: | IRFP9140-ND |
| Manufacturer Part#: |
IRFP9140 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 100V 21A TO-247AC |
| More Detail: | P-Channel 100V 21A (Tc) 180W (Tc) Through Hole TO-... |
| DataSheet: |  IRFP9140 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 180W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 61nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 200 mOhm @ 13A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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IRFP9140 is a commonly used MOSFET or metal-oxide-semiconductor field-effect transistor which is built using a vertical DMOS structure. It belongs to a family of single field-effect transistors, or single-FET. This type of field-effect transistor is mainly used in switching applications such as high-power amplifiers, especially at frequencies of more than 1 MHz.IRFP9140 is a type of gallium arsenide MOSFET. Gallium arsenide is a compound of gallium and arsenic which has a high breakdown voltage, high transconductance and low resistance. As a result, it is very suitable for use in power amplification circuits. This type of transistor has good thermal stability, which makes it a good choice for high frequency applications.The MOSFET or metal-oxide-semiconductor field-effect transistor is a three-terminal device that works on the principle of the electric field. It is composed of a gate, a source, and a drain. The gate is an insulated electrical gate which is applied with a voltage to turn the transistor on and off. It is like a switch that can control the current flowing in the transistor.The source and the drain are two terminals which are connected to the external circuit. When a positive voltage is applied to the gate, the current flows from the source to the drain. When the voltage is reversed, the current stops flowing. The current that flows when the transistor is turned on is called the drain current. When the transistor is turned off, there is no current flow.The voltage between the source and the drain, known as the drain-to-source voltage (VDS), is what determines the transistors\' behavior. The drain-to-source voltage causes an electric field to form above the gate, which modulates the current flow between the source and the drain. This is why it is called a field-effect transistor.IRFP9140 can be used in a variety of applications such as motor control, high-power motor drives, lighting systems, automotive switch-mode power supplies, and other high-frequency switching applications. The device has a continuous drain current of 150 amperes, and a total power dissipation of 200 watts. The breakdown voltage of the device is 40 Volts and its on-resistance is 0.040 Ohms.IRFP9140 is a useful MOSFET for applications where high switching frequencies and power gains are needed. It is a good choice for power amplification applications, due to its low on-resistance, high transconductance and high breakdown voltage. The device is widely used in a variety of high-frequency power applications, and is an ideal choice for designing efficient high-frequency switching circuits.
The specific data is subject to PDF, and the above content is for reference
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