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IRFP460 is a type of insulated-gate field-effect transistor (IGFET) with N-channel enhancement-mode that has low drain-source on-state resistance RDS(ON). It is a three terminal device with source, gate and drain terminals with a maximum Vdss of 600v, max I D of 36A and a max RDS(on) of 0.2 Ohm. IRFP460 is usually used in high side switch applications and it can be used as replacements for 410 / 601 devices as it offers lower power dissipation and higher number of avalanche energy.

Introduction

IRFP460 is designed to be used as a switch or amplifier in many electronic applications such as motor drives, power supply circuits, power inverters, DC/DC converters, solar inverters, industrial controls and many other applications. This powerful IGBT is able to transfer large amounts of energy with low ON state resistance. IRFP460 offers superior performance compared to other IGFET switches in terms of thermal performance and avalanche energy. Its wide operating temperature range from –55°C to +150°C makes it suitable for applications operating under extreme temperature conditions.

Application Areas

IRFP460 is mainly used in high side switch applications due to its high breakdown voltage, low on state resistance and excellent avalanche energy. It is often used in applications that require high power efficiency such as motor drives, power supply circuits, power inverters, DC/DC converters, solar inverters and industrial controls. It can also be used as replacement for the 410 or 601 IGBTs as it offers superior performance in terms of thermal performance and avalanche energy. The device can operate in temperatures ranging from –55°C to +150°C, making it suitable for applications operating under extreme temperatures.

Working Principle

The working principle of an IRFP460 is based on its P-Channel MOSFET semiconductor design. It consists of three parts – source, gate and drain. The current flows from source to drain when the voltage at the gate is raised. This process is called “MOSFET Enhancement Operation”. The source is always connected to the drain when the device is in operation. The source terminal is in a higher negative potential relative to that of the gate and the drain terminal. This establishes an electric field between them and allows current to flow through it. The current is then modulated by the voltage applied at the gate terminal.

IRFP460 is also designed to operate in the “AVOdiode” (voltage dependent diode) mode when the drain is higher than the gate voltage. The device works as a half-wave rectifier. The current flows from the source to the drain while the voltage is higher than the gate voltage. When the voltage applied to the gate is lower than the source voltage, the device will be open and no current will flow. This makes it suitable for use in many applications such as motor drives, power supply circuits and industrial controls.

Conclusion

IRFP460 is a powerful IGBT that can be used in applications that require high power efficiency. It offers superior performance in terms of thermal performance and avalanche energy. The device is mainly used in high side switch applications due to its high breakdown voltage, low onstate resistance and excellent avalanche energy. It can operate in temperatures ranging from –55°C to +150°C, making it suitable for applications operating under extreme temperatures. The IRFP460 comes with three terminals – source, gate and drain and current flows from source to drain when the voltage is applied to the gate terminal.

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