IRFP240

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IRFP240 is a high power MosFET (Metal–Oxide–Semiconductor field-effect transistor) designed to handle high current loads. It is a single N-channel HEXFET Power MOSFET with different levels of performance for different applications.

Application Field

This device is suitable for general purpose switch mode power supplies, DC-DC converters, motor control, high frequency switched mode power supplies, AC-DC converters and audio amplifiers. The maximum drain source voltage of this device is 950V, while its current handling capacity is 30A. It also has an easy to use gate threshold of 5.5V and gate to source voltage of 18V. At the same time, its temperature range is from -55°C to 150°C, making it a very efficient and reliable device.

Working Principle

IRFP240 is an N-channel field effect transistor (FET) which uses power MOSFET as its main component. Its internal structure consists of interdigitated metal–oxide– semiconductor (MOS) capacitors, connected in series between source and drain contacts. These capacitors determine the transistor’s source-drain breakdown voltage, the gate’s voltage-current characteristics and the threshold voltage, which is an important parameter when setting the transfer characteristic of the device.

The device works when a voltage is applied between the gate and the source. When this voltage (Vg) exceeds the threshold value (Vt), a channel is created under the gate that connects the source and drain. This channel concentration is proportional to the difference between the gate and source voltage. When this difference decreases, the channel is closed and the device is in its off state. This cycle is prepared as the FET is switched on and off at different speeds.

The device also has an important parameter known as the on-resistance, or RDS(on). This is the resistance the FET exhibits when it is in its on state. The on-resistance of the IRFP240 is typically between 0.45Ω and 0.50Ω under high drain currents.

The FET also has input capacitance. This is the amount of electric charge stored in the gate for a given gate voltage. This capacitance is characteristic of the device and is typically between 230-280 pF.

The IRFP240 also includes a maximum drain-source voltage of 900V and a drain-source current rating of 30A, making it suitable for high-current applications. It is also considered a logic-level device, meaning the drain and source follow the gate voltage thresholds at small gate-source voltages.

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