IRFP140NPBF Allicdata Electronics
Allicdata Part #:

IRFP140NPBF-ND

Manufacturer Part#:

IRFP140NPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 33A TO-247AC
More Detail: N-Channel 100V 33A (Tc) 140W (Tc) Through Hole TO-...
DataSheet: IRFP140NPBF datasheetIRFP140NPBF Datasheet/PDF
Quantity: 1513
Stock 1513Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 52 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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IRFP140NPBF Application Field and Working Principle

The IRFP140NPBF, also known as the International Rectifier Semiconductors Funny Pack (IFSFP), is a powerful and reliable N-channel MOSFET device specifically designed to provide high switching performance with low gate charge and excellent low Rdson. The IRFP140NPBF is available in a variety of packages, including the TO-220, which gives designers flexibility in packaging options.

This device is widely used in a variety of applications, including switching regulators, portable and desktop computer power supplies, DC/DC converters, and motor speed control. The IRFP140NPBF is an ideal choice for high current DC applications such as automotive audio, lighting systems, and controller applications. Additionally, the IRFP140NPBF can be used in very high frequency switching applications such as medical imaging, touch screens, controllers, and high-end switching systems.

The working principle of the IRFP140NPBF is simple. The device is comprised of a couple of metal oxide semiconductor (MOS) transistors connected in parallel. These MOS transistors are then used as a single switch which is controlled by a gate voltage. When a gate voltage is applied to the transistor, a channel is induced in the semiconductor material, allowing the current to flow from the drain to the source. This flow of current is what is responsible for switching the device on and off.

The main advantage of the IRFP140NPBF is its ability to provide high switching performance in high-current applications with low gate charge. The use of MOS transistors provides improved current carrying capacity compared to conventional bipolar transistors, thus providing improved efficiency and higher switching speeds. Additionally, the low gate charge of the device makes it well-suited for high-frequency applications.

The IRFP140NPBF is also designed to have a low on-resistance. This means that the voltage drop across the device is lower than its on-state resistance. This results in lower power consumption and higher efficiency for applications which need to switch quickly.

Overall, the IRFP140NPBF provides a reliable and high-performance solution for high current applications. Its low gate charge and high efficiency make it ideal for applications that require high switching performance, such as automotive audio, lighting systems, controllers, and high-end switching systems. Its low on-resistance also ensures low power consumption and higher efficiency.

The specific data is subject to PDF, and the above content is for reference

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