Allicdata Part #: | IRFP264NPBF-ND |
Manufacturer Part#: |
IRFP264NPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 250V 44A TO-247AC |
More Detail: | N-Channel 250V 44A (Tc) 380W (Tc) Through Hole TO-... |
DataSheet: | IRFP264NPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 380W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3860pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFP264NPBF is an advanced fast-switching N-channel power MOSFET which is designed with an advanced dynascan technology. It has a rugged 2.5V tolerant gate design that can protect the gate from overtaking and false triggering. The drain-to-source avalanche energy (EAS) of the device is up to 308mJ at 110V and 618mJ at 200V. The IRFP264NPBF has a wide range of applications, such as motor control, power supply, speed control, switching regulators, etc.
The working principle of IRFP264NPBF MOSFET is based on the principle of electrostatics, according to which the electric field is created by the movement of electric charges. When a voltage is applied across the Gate and Source of a MOSFET, the electric field will cause electrons to flow from the Source to the Gate, resulting in a depletion region. As the voltage increases, the depletion region grows and eventually results in an inversion layer which is known as inversion charge. The inversion charge will further increase the depletion region and channel conductivity, resulting in the enhancement of the MOSFET.
The IRFP264NPBF MOSFET has a wide range of applications due to its superior performance characteristics. It has been successfully used in motor control, power supply, speed control and switching regulator applications. The device is also suitable for applications such as low frequency RF amplifiers and high frequency RF switch devices. Furthermore, it can be used in other applications such as switch modulation, power conversion and audio systems.
In conclusion, the IRFP264NPBF is an advanced fast-switching N-channel power MOSFET which is designed to provide superior performance characteristics for a wide range of applications. It is designed with an advanced dynascan technology which offers a rugged 2.5V tolerant gate design. The device has a wide range of applications and has been used in motor control, power supply, speed control and switching regulator applications. The working principle of the device is based on the principle of electrostatics, according to which electric field is created when a voltage is applied across Gate and Source of a MOSFET.
The specific data is subject to PDF, and the above content is for reference
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