Allicdata Part #: | IRFP3077PBF-ND |
Manufacturer Part#: |
IRFP3077PBF |
Price: | $ 3.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 120A TO-247AC |
More Detail: | N-Channel 75V 120A (Tc) 340W (Tc) Through Hole TO-... |
DataSheet: | IRFP3077PBF Datasheet/PDF |
Quantity: | 1828 |
1 +: | $ 3.04290 |
10 +: | $ 2.71971 |
400 +: | $ 2.01251 |
800 +: | $ 1.63176 |
1200 +: | $ 1.52298 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AC |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 340W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9400pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 220nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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。IRFP3077PBF is a single insulated gate field effect transistor (IGFET or MOSFET) from the 3077 family made by International Rectifier. It has very low gate charge, high frequency operation, and low on-state resistance to ensure excellent current conduction. This MOSFET is mainly used in high-speed, low-noise circuits and has a wide variety of applications in devices such as motor drives and power supplies. In this article, we will explore the IRFP3077PBF and its applications and working principles.
Applications
The IRFP3077PBF is a type of MOSFET which is suitable for use in high-speed, low-noise circuits. This type of device is usually used in end applications such as motor drives, power supplies, and servers.
It is also well suited for use in switching applications such as speed control systems and dc-dc converters. In addition, it is useful for low-frequency off-line switch-mode power supplies as well as higher frequency on-line applications.
The IRFP3077PBF is an excellent choice for use in power converters due to its low on-state resistance and high breakdown voltage. This makes it an ideal choice for use in high-precision power control applications as it is capable of providing precise control over the voltage or current in the circuit.
The IRFP3077PBF is also suitable for use in audio and recording applications, such as for mixing and equalizing. It can also be used in high-frequency switching applications due to its low loss characteristics.
Working Principle
The IRFP3077PBF is an insulated gate FET (IGFET) which means it uses a gate to gate current or voltage to change the conductance of a channel between the source and drain of the device. When a voltage is applied to the gate, it creates an electrostatic field which allows current to flow across the channel. The larger the voltage applied to the gate, the larger the current which can flow across the channel.
The IRFP3077PBF is a vertical MOSFET which means that the channel between the source and drain is vertical instead of horizontal. This helps to increase the drain-source breakdown voltage and makes it more suitable for use in higher power circuits. It also allows the device to have a lower on-state resistance which improves its efficiency.
The IRFP3077PBF is an enhancement device which means that it requires a positive gate voltage to be applied in order to make it conduct. This is because the gate voltage creates an electrostatic field which attracts electrons from the channel and creates a conductive path across the channel.
The IRFP3077PBF also has a low gate charge which means that it is capable of switching at high speeds and handling high current loads without suffering from excessive switching losses. This makes it an excellent choice for use in high-frequency applications such as motor control, switching power supplies, and audio components.
In addition, the IRFP3077PBF is designed to be very efficient which means that it can handle large amounts of power while still maintaining a low board footprint. This makes it a great choice for applications which require minimal power loss.
The specific data is subject to PDF, and the above content is for reference
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