IRFP360LCPBF

The IRFP360LCPBF transistor is a high-current fifth-generation N-channel MOSFET. It has an on-resistance rating of 0.16 Ω, and a drain-source voltage rating of 60 V. The IRFP360LCPBF is a high-frequency single-signal power device, meaning it is well-suited to high-frequency applications including signal amplification. This N-channel MOSFET is excellent for output stage amplification and power switching.

Application Fields

The IRFP360LCPBF is suitable for a wide variety of signal amplification and power switching applications. The high-frequency switching and high power handling capability make it suitable for switching heavy loads over a wide range of frequencies, including audio, telecommunications, and power conversion. Additionally, it is often used as an output stage in amplifiers due to its high-current capability.

Working Principle

The IRFP360LCPBF employs an N-channel MOSFET, meaning it is composed of an insulated gate that applies a voltage to the channel. When the gate voltage is positive, a potential difference is created between the channel and the drain, allowing current to flow. The IRFP360LCPBF has an internally generated Self-Aligned Source, which reduces current leakage and ensures high efficiency and performance. Thanks to the fifth generation structure of the IRFP360LCPBF, it can switch current up to 1.7 A fast, which is suitable for high-frequency switching.

Conclusion

The IRFP360LCPBF is a high-current, fifth-generation N-channel MOSFET suitable for a wide range of signal amplification and power switching applications. The high-frequency switching and high power handling capability make it suitable for switching heavy loads over a wide range of frequencies, while the internally generated Self-Aligned Source ensures high efficiency and performance. Thanks to its fifth-generation structure, the IRFP360LCPBF can switch current up to 1.7 A fast, making it an excellent choice for high-frequency applications.