IRFPC60LCPBF

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The IRFPC60LCPBF is a high-performance N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) from a range of products offered by the reliable and renowned semiconductor specialists, International Rectifier. Featuring a wide range of parameters, the device is suitable for a variety of applications. It is suitable for power supply switching, power amplifiers and power cords.

The IRFPC60LCPBF is designed to provide high power MOSFET performance including fast switching speed and low saturation voltage. It features a low-profile surface mount construction and is capable of operating at rise and fall times of less than 8 ns. The switch features very low internal gate resistance (Rg) and offers an on-state resistance (RDSon) of around 0.08 ohms.

The IRFPC60LCPBF has a P-channel MOSFET structure, with a voltage rating of up to 60V and a current rating of up to 5A. The switch can withstand a maximum junction temperature of 175°C, making it suitable for operation in high temperature environments. It also features a low total gate charge (QG) of around 5.2nC and a gate-drain breakdown voltage of 20V.

The IRFPC60LCPBF is capable of operating over a wide temperature range, with a junction-to-case thermal resistance of around 0.005 K/W. Its high transconductance (gm) of 1.3 S/mm makes it suitable for signal processing and switching applications. It also features a low leakage current due to its low reverse saturation current (IRSH).

The IRFPC60LCPBF can be easily controlled with a gate voltage of around 5V. It is a digital control device, relatively easy to implement and use. It also offers a high level of reliability due to its low On-resistance, high-speed switching performance, low power consumption and thermal stability. The device is suitable for many applications, such as motor control, power switching, automotive applications, digital switching and general-purpose power supplies.

In conclusion, the IRFPC60LCPBF is a high-performance N-Channel MOSFET, suitable for a wide range of applications requiring fast switching times and low power consumption. It is a digital control device capable of providing reliable performance in high temperature and power supply applications. The low total gate charge and gate-drain breakdown voltage of the device make it suitable for power supply switching, power amplifiers and power cords.

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