| Allicdata Part #: | IRFS33N15D-ND |
| Manufacturer Part#: |
IRFS33N15D |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 150V 33A D2PAK |
| More Detail: | N-Channel 150V 33A (Tc) 3.8W (Ta), 170W (Tc) Surfa... |
| DataSheet: | IRFS33N15D Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.8W (Ta), 170W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2020pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 56 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRFS33N15D is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that can be used in several different electrical applications. It is an important component of modern electronics, and its popularity lies in its ability to handle higher currents and voltages than other MOSFETs. In this article, we will discuss the application field and working principle of the IRFS33N15D.
Application Fields
The IRFS33N15D is a general-purpose MOSFET, and it can be used in a variety of applications. It can be used as a switch or as a voltage or current amplifier. It can also be used in power supply circuits to regulate power, or as an interface between digital and analog circuits. Additionally, it can be used in automotive, high-speed communication, and industrial applications.
The IRFS33N15D is especially suitable for high-frequency and high-temperature applications because of its low-loss characteristics. Additionally, it is found in applications such as motor control, audio power amplifiers, high-density communications systems, and AC/DC inverters.
Working Principle
The IRFS33N15D is a type of Field-Effect Transistor (FET), and it operates on the principle of a voltage-controlled current flow. It is composed of two terminals - the source and the drain - and the gate terminal, which is in between the source and drain. When a positive voltage is applied to the gate, electrons flow from the source to the drain, creating a current flow. The current flow can be easily controlled and adjusted with the gate voltage. This makes the IRFS33N15D much more efficient than other types of transistors.
In addition to its low-power consumption, the IRFS33N15D is also known for its low threshold voltage. This means that less voltage is required to turn the MOSFET on, which in turn means that less heat is produced. This makes it an ideal choice for high-frequency applications.
Overall, the IRFS33N15D is a versatile and reliable MOSFET that can be used in many different applications. It is widely used in both commercial electronics and industrial applications due to its high efficiency, low power consumption, and versatility. It is an essential component of modern electronics, and it is sure to remain a staple of the industry for many years to come.
The specific data is subject to PDF, and the above content is for reference
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IRFS33N15D Datasheet/PDF