| Allicdata Part #: | IRFS4610-ND |
| Manufacturer Part#: |
IRFS4610 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 73A D2PAK |
| More Detail: | N-Channel 100V 73A (Tc) 190W (Tc) Surface Mount D2... |
| DataSheet: | IRFS4610 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 100µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 190W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3550pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 14 mOhm @ 44A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 73A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRFSS4610 is a single-type power device that belongs to the FETs and MOSFETs product family. As a single-type power device, it utilizes either one N-channel or one P-channel for operation. Produced by International Rectifier, this device is manufactured with both P-channel and N-channel, making it applicable for various uses and load types. The IRFSS4610 is widely used in various applications such as switching power supply, DC-DC converters, and motor controls.
When it comes to powering the device and controlling the current, the IRFSS4610 has the capacity to control both current and voltage. It is provided with operating features such as gate drive isolation, gate drive resistance, gate and drain voltages, and ratings for drain power dissipation. Controlling the current is through the use of an internal analog current control PGA. This PGA can be used to program and control the maximum current of the device.
The IRFSS4610 can be operated in both P-channel and N-channel. Depending on the application, either the P-channel or the N-channel will be use on the device. A gate drive isolation feature is used to control the current flow in both modes. The gate drive isolation improves the dynamic response of the device and eliminates delays in the circuits.
The IRFSS4610 also provides gate drive signals to the gates in order to control the current and voltage of the device. This device is supplied with an adjustable voltage supply of up to 8 Volts and drain voltage of up to 15 Volts. This allows the device to control both current and voltage accurately.
The working principles of the IRFSS4610 are based on both metal oxide semiconductor field effect transistors (MOSFETs) and junction field effect transistors (JFETs). MOSFETs function by allowing conducting carriers to flow from the source to the drain, while JFETs operate by passing the current between a pair of gate electrodes where one is insulated from the other.
The IRFSS4610 is ideal for a number of applications due to its flexibility and reliable operation. Some of the common applications include AC control systems, DC-DC converters, motor controls, switching power supplies, and battery charging systems. With its adjustable PGA feature, it offers high reliability and long life with accurate current and voltage regulation.
In conclusion, the IRFSS4610 single-type power device is a highly effective and reliable power device. It is provided with various features and specifications, making it suitable for a number of applications. It is also equipped with gate drive isolation and programmable voltage and current features, allowing for accurate and efficient operation. Its flexibility and performance make it ideal for a number of applications.
The specific data is subject to PDF, and the above content is for reference
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IRFS4610 Datasheet/PDF