IRFS7530PBF Allicdata Electronics
Allicdata Part #:

IRFS7530PBF-ND

Manufacturer Part#:

IRFS7530PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N CH 60V 195A D2PAK
More Detail: N-Channel 60V 195A (Tc) 375W (Tc) Surface Mount D2...
DataSheet: IRFS7530PBF datasheetIRFS7530PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13703pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 411nC @ 10V
Series: HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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The IRFS7530PBF is a cool-running, 625V P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) that offers a high-current capability and low RDS(ON). It is an ideal choice for applications that require high-current capacity, low drain-source on-state resistance (RDS(ON)), and low total harmonic distortion (THD). The IRFS7530PBF also has a low input and output voltage drop, making it suitable for high frequency switching and motor control applications.

The IRFS7530PBF is based on the common source configuration to enhance the current flow and reduce power dissipation. It is available in a TO-220 Package and is designed with a P-channel design. The P-channel design ensures the best performance when the device is switched on, as the FET gate voltage is consistently low. This leads to improved efficiency of the device.

The IRFS7530PBF has a very low RDS(ON) of 5 milliohms, which is well below most competitive offerings. This low RDS(ON) will help to reduce switching losses in high-current applications and ensure the fastest possible device turn-on and turn-off times. The device also has low signal distortion, at 0.001%. This ensures that the device can be used in applications requiring clean signal transmission.

The IRFS7530PBF is highly resistant to voltage stress, making it well suited for use in applications utilizing high voltage levels. The device has a low gate threshold voltage, which allows the user to switch the device efficiently with minimal current input. This reduces power consumption, making the device highly efficient.

The IRFS7530PBF has a wide variety of applications, including motor control, as mentioned before. Its low-voltage and THD characteristics make it ideal for motor control applications, as it can ensure accurate control of the motor\'s torque and speed. The device can also be used in switched-mode power supply circuits, as its low input and output voltage drops will ensure efficient power conversion. It can also be used in automotive applications, such as load solenoid control.

The working principle of the IRFS7530PBF is relatively simple. When the device is switched on, charge carriers form a conducting channel in the device. This conductive channel allows current to pass through the device, allowing the device to be used in applications such as motor control circuits. When the device is switched off, the conducting channel will disappear, meaning that no current can pass through the device. This allows the device to be used as an effective switch in power supply applications as well.

In conclusion, the IRFS7530PBF is an ideal choice for applications that require high current capacity, low drain-source on-state resistance, low total harmonic distortion, and low voltage drops. The device has a wide range of uses, from motor control to load solenoid control. The device is based on the common source configuration and works on the principle of charge carriers forming a conducting channel when the device is switched on. It has a very low RDS(ON) of 5 milliohms, which is well below most competitive offerings, and its low gate threshold voltage means that the device can be switched on and off efficiently with minimal current input.

The specific data is subject to PDF, and the above content is for reference

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