Allicdata Part #: | IRFS3307ZPBF-ND |
Manufacturer Part#: |
IRFS3307ZPBF |
Price: | $ 2.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 120A D2PAK |
More Detail: | N-Channel 75V 120A (Tc) 230W (Tc) Surface Mount D2... |
DataSheet: | IRFS3307ZPBF Datasheet/PDF |
Quantity: | 12 |
1 +: | $ 2.13570 |
10 +: | $ 1.94292 |
100 +: | $ 1.58250 |
500 +: | $ 1.25493 |
1000 +: | $ 1.05836 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 230W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4750pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 5.8 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IRFS3307ZPBF is a N-Channel MOSFET from International Rectifier designed for high-speed switching applications. It features low gate charge, improved avalanche and punch-through characteristics, and fast switching capabilities. The device enables designers to reduce part counts and design cycle times when used in high supply voltage, high speed, and high current switching applications.
Application Field of IRFS3307ZPBF
The IRFS3307ZPBF is particularly suitable for applications such as:
- DC/DC converters
- RGB backlight drivers
- Load switches
- DC/AC inverters
- Motor control
- DC Motor speed and torque control
- Switching mode power supplies
- Class D audio amplifiers
Working Principle of IRFS3307ZPBF
The essence of how a MOSFET works is that it can act as a voltage-controlled switch.When the voltage at the gate of the MOSFET is high, electrons are attracted to the gate region and create a conducting channel between the drain and the source of the MOSFET. This allows for current to flow from the drain to the source of the MOSFET. When the voltage at the gate of the MOSFET is low, the conducting channel is depleted and it effectively acts as an open switch, cutting off the flow of current between the drain and source.
The main advantage of using a MOSFET is that the voltage at the gate can be much lower than the voltage at the drain and source. This means that the gate current is minimal, reducing power loss during switching. The low gate drive voltage also makes them suitable for use with low supply voltage systems such as automotive electronics.
In the case of the IRFS3307ZPBF, it is a N-channel MOSFET. When the voltage at the gate is high, electrons are attracted to the gate region and create a conducting channel between the drain and the source. In this case, current will flow from the drain to the source. When the voltage at the gate is low, the conducting channel is depleted and it effectively acts as an open switch, blocking the flow of current from the drain to the source.
The IRFS3307ZPBF is designed to offer improved avalanche and punch through characteristics as well as fast switching speeds, making it suitable for high-performance applications such as DC./DC converters and motor control.
The specific data is subject to PDF, and the above content is for reference
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