IRFS3207PBF Allicdata Electronics
Allicdata Part #:

IRFS3207PBF-ND

Manufacturer Part#:

IRFS3207PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 170A D2PAK
More Detail: N-Channel 75V 170A (Tc) 300W (Tc) Surface Mount D2...
DataSheet: IRFS3207PBF datasheetIRFS3207PBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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​IRFS3207PBF is a monolithic N-channel power MOSFET which is suited for use in medium voltage drivers of up to 60 Volts. It has a rugged gate to source ESD protection (Class C3) and features enhanced ruggedness and low slew rates. The IRFS3207PBF is designed to provide high power density, low RDS(ON) and fast switching performances. The IRFS3207PBF is designed to minimize power losses and minimize the effect of high frequency. Due to its small size and low voltage, this MOSFET can be used in many applications, including motor drives, digital power supplies, lighting ballasts, and industrial systems.

The IRFS3207PBF is a voltage-controlled device. When the source voltage is applied, a well-controlled Gate-to-Source voltage VGS arises. The Gate current is then limited by the circuit components, including the Gate resistor and the Gate capacitance. In this way, the Gate voltage can be controlled accurately. The change in Gate voltage changes the resistance between drain and source, which is known as the RDS(ON).

When VGS is greater than the threshold voltage, the MOSFET turns on and the drain-to-source current (I DS) flows. The electrical resistance between drain and source is known as the RDS(ON) which is determined by the Gate voltage. The value of RDS(ON) decreases with increasing Gate voltage. When the Gate voltage exceeds a certain point, VGS(th), the MOSFET is fully turned on and can conduct high currents.

When a Voltage is applied to the Drain, this MOSFET exhibits high voltage capability and low drain-to-source resistance. This makes it ideal for use in medium voltage driver applications. The IRFS3207PBF has a guaranteed RDS(ON) which remains constant over a wide range of temperatures and offers enhanced ruggedness and low gate charge. This ensures a fast switching response and low power losses due to lower gate charges.

Due to its enhanced ruggedness, its low gate-to-source resistance and its fast switching response, the IRFS3207PBF is suitable for a number of applications. These include motor drive controllers, digital power supplies, lighting ballasts, and industrial systems. This device is suitable for use with Loads of up to 60V and currents of up to 50A. In addition, due to its low RDS(ON), the power loss is reduced, resulting in better system efficiency.

In conclusion, the IRFS3207PBF is a monolithic N-channel power MOSFET which is suited for use in medium voltage drivers of up to 60 Volts. It has a rugged gate to source ESD protection and features enhanced ruggedness and low slew rates. Due to its small size and low voltage, this MOSFET can be used in a variety of applications, such as motor drives, digital power supplies, lighting ballasts and industrial systems. Its low RDS(ON) enhances system efficiency and its fast switching response reduces the power loss.

The specific data is subject to PDF, and the above content is for reference

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