Allicdata Part #: | IRFS3207PBF-ND |
Manufacturer Part#: |
IRFS3207PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 170A D2PAK |
More Detail: | N-Channel 75V 170A (Tc) 300W (Tc) Surface Mount D2... |
DataSheet: | IRFS3207PBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 75V |
Current - Continuous Drain (Id) @ 25°C: | 170A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7600pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IRFS3207PBF is a monolithic N-channel power MOSFET which is suited for use in medium voltage drivers of up to 60 Volts. It has a rugged gate to source ESD protection (Class C3) and features enhanced ruggedness and low slew rates. The IRFS3207PBF is designed to provide high power density, low RDS(ON) and fast switching performances. The IRFS3207PBF is designed to minimize power losses and minimize the effect of high frequency. Due to its small size and low voltage, this MOSFET can be used in many applications, including motor drives, digital power supplies, lighting ballasts, and industrial systems.
The IRFS3207PBF is a voltage-controlled device. When the source voltage is applied, a well-controlled Gate-to-Source voltage VGS arises. The Gate current is then limited by the circuit components, including the Gate resistor and the Gate capacitance. In this way, the Gate voltage can be controlled accurately. The change in Gate voltage changes the resistance between drain and source, which is known as the RDS(ON).
When VGS is greater than the threshold voltage, the MOSFET turns on and the drain-to-source current (I DS) flows. The electrical resistance between drain and source is known as the RDS(ON) which is determined by the Gate voltage. The value of RDS(ON) decreases with increasing Gate voltage. When the Gate voltage exceeds a certain point, VGS(th), the MOSFET is fully turned on and can conduct high currents.
When a Voltage is applied to the Drain, this MOSFET exhibits high voltage capability and low drain-to-source resistance. This makes it ideal for use in medium voltage driver applications. The IRFS3207PBF has a guaranteed RDS(ON) which remains constant over a wide range of temperatures and offers enhanced ruggedness and low gate charge. This ensures a fast switching response and low power losses due to lower gate charges.
Due to its enhanced ruggedness, its low gate-to-source resistance and its fast switching response, the IRFS3207PBF is suitable for a number of applications. These include motor drive controllers, digital power supplies, lighting ballasts, and industrial systems. This device is suitable for use with Loads of up to 60V and currents of up to 50A. In addition, due to its low RDS(ON), the power loss is reduced, resulting in better system efficiency.
In conclusion, the IRFS3207PBF is a monolithic N-channel power MOSFET which is suited for use in medium voltage drivers of up to 60 Volts. It has a rugged gate to source ESD protection and features enhanced ruggedness and low slew rates. Due to its small size and low voltage, this MOSFET can be used in a variety of applications, such as motor drives, digital power supplies, lighting ballasts and industrial systems. Its low RDS(ON) enhances system efficiency and its fast switching response reduces the power loss.
The specific data is subject to PDF, and the above content is for reference
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