Allicdata Part #: | IRFS3207ZTRRPBFTR-ND |
Manufacturer Part#: |
IRFS3207ZTRRPBF |
Price: | $ 1.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 120A D2PAK |
More Detail: | N-Channel 75V 120A (Tc) 300W (Tc) Surface Mount D²... |
DataSheet: | IRFS3207ZTRRPBF Datasheet/PDF |
Quantity: | 6400 |
800 +: | $ 1.13294 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6920pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.1 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFS3207ZTRRPBF is a trench MOSFET transistor manufactured by International Rectifier. This device is a single N-Channel, Enhanced Vds, and AEC-Q101 Qualified MOSFET. It uses a 30 V drain source voltage and has a 0.032 Ohm typical RDS(on).
Application Field
The IRFS3207ZTRRPBF provides high performance power circuit design solutions for industrial, consumer, computer, and telecom applications. It is especially well suited for use in power applications and is also suitable for automotive and consumer applications, such as lighting, audio, etc. It can be used for applications such as power switches, converters, high-speed logic level power conversion, and power regulation circuits.
Working Principle
A MOSFET is a terminal current control device that works based on the movement of electrons. This field effect transistor has source, drain and gate terminals. When a voltage is applied between the source and gate and the applied voltage is larger than the threshold voltage, current will flow between the source and drain terminals. The MOSFET works like an electronic switch, where the current flow is controlled by the applied voltage at the gate. The IRFS3207ZTRRPBF has an enhancement mode operation, which means that the device is normally off and needs a voltage to be applied to the gate to turn it on. When the gate voltage is low, the device is turned off and there is no drain current.
The IRFS3207ZTRRPBF has a low on-resistance, which means that it can handle a high-current flow. It can be used in buck and boost converters, H-bridge circuits, DC-DC converters, automotive electrical systems and other power applications. The device also has low gate charge, which helps reduce the amount of power needed to switch the device on. It also has a fast switching speed and a temperature range of –55°C to 150°C.
The IRFS3207ZTRRPBF is a reliable and versatile device that can be used in a variety of applications. It has a low on-resistance, low gate charge, and fast switching speed. Its wide temperature range and AEC-Q101 qualification make it suitable for a variety of applications, from industrial to automotive applications.
The specific data is subject to PDF, and the above content is for reference
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