IRFS4115TRLPBF

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Introduction: IRFS4115TRLPBF is a non-P-channel enhancement mode power field-effect transistor (FET). This product provides benefits such as high gain, low gate-charge, fast switching time and impedance regulation. It is available in a packages such as TO-220, SO-8 and others. It is made with silicon-on-insulator (SOI) technology and enhance N-channel power MOSFETs.

Application Fields: IRFS4115TRLPBF are widely used in the applications of DC to DC Converter, Power Amplifiers, Class-D audio amplifier, High side switch and load switch, Automotive coolant fan controller, Bias generator, High speed switch and low power low side switch.

Working Principle: This device consists of three layers of silicon and has an internal source to gate resistance resulting in low turn on and leakage currents. When gate voltage is positive, majority carriers flow from the source region to drain region and form an inversion layer in the channel region. This inversion layer provides a low resistance path between the source and the drain and thus results in high gain and low gate charge. During OFF-state, the turn off voltage applied to the gate will ensure the device is disabled and current from the source is prevented from reaching the drain.

Conclusion: IRFS4115TRLPBF is widely used in DC to DC converter, power amplifiers, class-D audio amplifiers, high side switch and load switch, automotive cooling fan controller, bias generator, high speed switch and low power low side switch. This device is made with silicon-on-insulator (SOI) technology and presents the benefits of fast switching time, low gate-charge and high gain while exhibiting low turn on and leakage currents. It is available in the package of TO-220, SO-8 and others.

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