IRFS450B Allicdata Electronics
Allicdata Part #:

IRFS450B-ND

Manufacturer Part#:

IRFS450B

Price: $ 1.97
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 9.6A TO-3PF
More Detail: N-Channel 500V 9.6A (Tc) 96W (Tc) Through Hole TO-...
DataSheet: IRFS450B datasheetIRFS450B Datasheet/PDF
Quantity: 1000
360 +: $ 1.76949
Stock 1000Can Ship Immediately
$ 1.97
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: SC-94
Supplier Device Package: TO-3PF
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 96W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 390 mOhm @ 4.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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The IRFS450B is a high-voltage, high-speed, standard-threshold N-Channel MOSFET commonly used for various kinds of application fields. Compared to the older IRF1010, the IRFS450B has better RDS(ON) values, faster switching times, and lower losses. This makes it suitable for a wide range of applications from consumer electronics to power conversion and motor drives.

The IRFS450B is a depletion-mode enhancement-type MOSFET. As with most MOSFETS, the IRFS450B is constructed of two bipolar junctions and an oxide layer that acts as an insulator between them. As the oxide layer is very thin and highly resistive, it requires a small amount of power to break the insulation and turn on the device. This power is known as the gate threshold voltage.

The IRFS450B is designed to have an extended drain-to-source breakdown voltage (VDSS), which is greater than 20V. This extended breakdown voltage allows it to be used in higher voltage applications and in systems with high inrush currents. The maximum drain current that the IRFS450B can handle is 48A, with a maximum power dissipation at 100W. Its maximum operating temperature is 175°C, with the device staying functional up to a junction temperature of 200°C.

The IRFS450B is commonly used in power converters, particularly in high power ON/OFF type circuits including switch mode power supplies and motor control. Its high speed switching capability makes it ideal for these sorts of applications where fast switching is necessary. Additionally, the small gate capacitance of the device allows it to have very fast switching times and excellent switching performance, making it suitable for applications running at high frequencies. The IRFS450B is also used in DC-DC converter circuits, such as those used in telecommunications systems and VoIP applications.

The IRFS450B is also suitable for various kinds of motor drives. It can be used for DC motor applications, such as in servo motor drives, stepper motor drives, and other industrial motor controllers. In these sorts of applications, the IRFS450B allows for better efficiency, speed, and reliability compared to traditional power transistors. Additionally, the low on-resistance (RDS(ON)) of the IRFS450B allows for increased current handling capabilities when compared to traditional power transistors.

In summary, the IRFS450B is a versatile and widely used power MOSFET. Its extended breakdown voltage, low on-resistance, and improved efficiency make it an ideal choice for various power conversion, motor drive, and switching applications. Its ability to switch quickly and reliably make it a popular choice for various kinds of motor controllers, DC-DC converters, and other high-frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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