IRFS3307ZTRRPBF Allicdata Electronics
Allicdata Part #:

IRFS3307ZTRRPBF-ND

Manufacturer Part#:

IRFS3307ZTRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 120A D2PAK
More Detail: N-Channel 75V 120A (Tc) 230W (Tc) Surface Mount D²...
DataSheet: IRFS3307ZTRRPBF datasheetIRFS3307ZTRRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 150µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRFS3307ZTRRPBF is a standard Transistor Field-Effect Transistor (FET) designed for high efficiency power switching. It is a N-channel enhancement mode MOSFET with a breakdown voltage of 24V. IRFS3307ZTRRPBF is a single-chip solution offering a low on-state resistance and zero-voltage switching. It can be used in applications such as power supply, motor control, and voltage conversion.

IRFS3307ZTRRPBF features a low gate charge and fast switching speeds to promote higher efficiency. It has a low on-state resistance and zero-voltage switching, which can offer better energy efficiency and reduce power consumption. It offers rugged packaging for reliable operation in any environment, and offers excellent noise immunity for interference-free operation.

The working principle of the IRFS3307ZTRRPBF is based on the principle of electronic conduction. It works by applying an electric field to a semiconductor material, which causes the electron levels in the material to become rearranged. This process is called carrier injection. As the electric field increases, more electrons move into the gate region, resulting in a current flow. This current, known as the drain current, is what drives the device.

When the IRFS3307ZTRRPBF is used in power switching applications, the device is designed to be switched on or off depending on the voltage applied to the gate. When a voltage is applied to the gate, the device is switched on or off and the drain current is either increased or decreased, allowing the device to control the amount of current flowing through it. This allows the device to regulate the amount of power that can be output to a load.

The IRFS3307ZTRRPBF is ideal for use in power supply, motor control, and voltage conversion applications. Its low on-state resistance and zero-voltage switching makes it an efficient power switching device, and its rugged packaging and excellent noise immunity makes it reliable in any environment. With its advanced features and robust design, the IRFS3307ZTRRPBF is a reliable and versatile solution for high efficiency power switching.

The specific data is subject to PDF, and the above content is for reference

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