IRFSL33N15DTRRP Allicdata Electronics
Allicdata Part #:

IRFSL33N15DTRRP-ND

Manufacturer Part#:

IRFSL33N15DTRRP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 150V 33A TO-262-3
More Detail: N-Channel 150V 33A (Tc) 3.8W (Ta), 170W (Tc) Throu...
DataSheet: IRFSL33N15DTRRP datasheetIRFSL33N15DTRRP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRFSL33N15DTRRP is a unique type of transistor, belonging to the family of Field Effect Transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). This particular transistor belongs to the Single type within that family, a type of transistor characterized by being extremely efficient and customizable, although also requiring more expertise to operate than other FETs and MOSFETs. As such, the IRFSL33N15DTRRP is ideal for applications which involve high levels of precision and technical difficulty, as well as achieving a relatively high output with minimal input.

Since the IRFSL33N15DTRRP falls within the classification of FETs and MOSFETs, it makes use of the same principle of operation that all FETs, MOSFETs, and Single FETs use. To understand the workings of the IRFSL33N15DTRRP and its other related transistors, it is important to understand the basic principles of operation that govern all FETs, MOSFETs, and Single FETs.

In general, FETs and MOSFETs operate on the principle of a voltage-control current source. This means that the control voltage determines the current that flows in the transistor. The greater the voltage, the greater the current; the lower the voltage, the lower the current. Moreover, the current varies proportionally to the voltage, so a linear relationship exists between the two parameters.

The IRFSL33N15DTRRP makes use of this principle by having three distinct terminals, each controlling the voltage, current, and power of the transistor itself. The first of the three terminals, known as the gate terminal, is used to regulate the voltage that passes through the transistor. The second terminal, known as the source terminal, passes the current through the transistor in proportion to the voltage that is applied to the gate terminal. Finally, the third terminal, known as the drain terminal, receives the current as it is proportional to the voltage that is applied to the gate terminal.

Due to its current-control properties, the IRFSL33N15DTRRP has a wide range of possible applications that make use of its current-discerning capabilities--from switching applications to power management applications. In switching applications, the IRFSL33N15DTRRP can be used to control the flow of electric current in circuits by regulating the voltage supplied to its gate terminal, thereby regulating the current that flows through the source and drain terminals. In power management applications, the IRFSL33N15DTRRP can be used for voltage regulation, such as controlling the voltage of a power source, as well as for current regulation, as the IRFSL33N15DTRRP’s characteristics make it well-suited for such applications.

The IRFSL33N15DTRRP is an excellent choice for applications requiring extreme precision and customization, as well as those requiring applications that demand a high level of efficiency while still maintaining a low power consumption. It is an incredibly useful transistor, and its multiple applications make it a valuable asset to many engineering projects.

The specific data is subject to PDF, and the above content is for reference

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