IRGB14C40LPBF Discrete Semiconductor Products

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IRGB14C40LPBF is a single IGBT chip that is widely used in a variety of applications. It is designed using a technology called insulated gate bipolar transistor (IGBT), which combines the fast switching speed of a metal oxide semiconductor field effect transistor (MOSFET) with the low saturation voltage of a bipolar transistor. The result is a power transistor that exhibits high current capabilities, low on-resistance, low gate charge, and low temperature rise. To understand the device better, this article will discuss the application field and working principle of the IRGB14C40LPBF.

Application Field of the IRGB14C40LPBF

The IRGB14C40LPBF is primarily used in power application. It is a three-terminal, thin-film, insulated-gate bipolar transistor (IGBT) chip with a reverse conducting body diode. This IGBT chip is designed for VCE between 800V and 1200V, IC of 14A, and TC = 125°C. Its trench field stop and high-voltage technology offers very low Eoff, thus providing high immunity to short-circuits and current surges in the circuit. The device is suitable for many applications, including, but not limited to, motor control, solenoid control, and battery protection. The device also offers efficient heat dissipation and excellent switching speed, making it an ideal pick for high power applications.

Working Principle of the IRGB14C40LPBF

The working principle of the IRGB14C40LPBF is based on the insulated-gate bipolar transistor (IGBT) technology. It uses a thin-film insulated-gate transistor structure that exhibits fast switching speed, while still providing a low saturation voltage capability due to the presence of a reverse conducting body diode. This structure consists of two sections, which are the emitter-base junction and the collector-base junction. The emitter-base junction is the input side, while the collector-base junction performs the output section of the device. The device is triggered by activating the gate capacitance, which generates an electric field that modulates the current flow through the device. When sufficient gate charge is applied to the IGBT chip, the voltage between the collector and the base rises, thus allowing current to flow through it.

Additionally, the collector is taken to a higher potential or a higher voltage than the base potential by applying a gate signal at the gate terminal of the device. This effectively forces the current to flow in a certain direction and thus the gate voltage controls the current in the device. The IGBT chip also has a reverse conducting body diode, which allows the current to flow even after the transistor is switched off, thus providing a low switching time. When the voltage at the gate terminal is reduced below a threshold, the reverse conducting diode will activate, allowing the current to flow in the reverse direction.

Conclusion

Overall, the IRGB14C40LPBF is an energy efficient, high performance single IGBT chip that is designed using insulated-gate bipolar transistor (IGBT) technology. It provides excellent current capability, low on-resistance, low gate charge, and low temperature rise, and can be used in a variety of power applications, making it an ideal choice for various applications. It also has a reverse conducting body diode which helps reduce the switching time of the device, thus making it the perfect device for high power applications.

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